JPS63137933U - - Google Patents

Info

Publication number
JPS63137933U
JPS63137933U JP3163587U JP3163587U JPS63137933U JP S63137933 U JPS63137933 U JP S63137933U JP 3163587 U JP3163587 U JP 3163587U JP 3163587 U JP3163587 U JP 3163587U JP S63137933 U JPS63137933 U JP S63137933U
Authority
JP
Japan
Prior art keywords
susceptor
wafer
storage hole
semiconductor
cover
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3163587U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3163587U priority Critical patent/JPS63137933U/ja
Publication of JPS63137933U publication Critical patent/JPS63137933U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例に係る半導体製造装
置の概略断面図、第2図は同装置に用いられるサ
セプタの一部切欠斜視図、第3図は同サセプタの
拡大半断面図、第4図及び第5図はそれぞれサセ
プタカバーの他の例を示す斜視図、第6図は従来
装置の概略断面図、第7図は同従来装置に用いら
れるアセプタの斜視図である。 1…外側ベルジヤ、1′…内側ベルジヤ、10
…サセプタ、11…サセプタ本体、12,12′
,12″…サセプタカバー、12d…ウエハ収納
穴、W…半導体ウエハ。
FIG. 1 is a schematic sectional view of a semiconductor manufacturing device according to an embodiment of the present invention, FIG. 2 is a partially cutaway perspective view of a susceptor used in the device, and FIG. 3 is an enlarged half-sectional view of the susceptor. 4 and 5 are perspective views showing other examples of the susceptor cover, FIG. 6 is a schematic sectional view of a conventional device, and FIG. 7 is a perspective view of an ceptor used in the conventional device. 1...Outer bell gear, 1'...Inner bell gear, 10
...Susceptor, 11...Susceptor body, 12, 12'
, 12″...Susceptor cover, 12d...Wafer storage hole, W...Semiconductor wafer.

Claims (1)

【実用新案登録請求の範囲】 ベルジヤ内のサセプタに半導体ウエハを載置し
、加熱しながら処理ガスを供給して該ウエハにエ
ピタキシヤル成長層を形成する装置において、 上記サセプタを、サセプタ本体と、ウエハ収納
穴を有するサセプタカバーとで構成したことを特
徴とする半導体製造装置。
[Claims for Utility Model Registration] An apparatus for forming an epitaxial growth layer on a semiconductor wafer by placing a semiconductor wafer on a susceptor in a bell gear and supplying a processing gas while heating the wafer, comprising: a susceptor body; A semiconductor manufacturing device comprising: a susceptor cover having a wafer storage hole; and a susceptor cover having a wafer storage hole.
JP3163587U 1987-03-03 1987-03-03 Pending JPS63137933U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3163587U JPS63137933U (en) 1987-03-03 1987-03-03

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3163587U JPS63137933U (en) 1987-03-03 1987-03-03

Publications (1)

Publication Number Publication Date
JPS63137933U true JPS63137933U (en) 1988-09-12

Family

ID=30837553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3163587U Pending JPS63137933U (en) 1987-03-03 1987-03-03

Country Status (1)

Country Link
JP (1) JPS63137933U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006173560A (en) * 2004-11-16 2006-06-29 Sumitomo Electric Ind Ltd Wafer guide, metal organic vapor phase growing device and method for depositing nitride semiconductor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006173560A (en) * 2004-11-16 2006-06-29 Sumitomo Electric Ind Ltd Wafer guide, metal organic vapor phase growing device and method for depositing nitride semiconductor
KR101127748B1 (en) * 2004-11-16 2012-03-23 스미토모덴키고교가부시키가이샤 Wafer guide, mocvd equipment, and nitride semiconductor growth mehtod

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