JPS63157925U - - Google Patents

Info

Publication number
JPS63157925U
JPS63157925U JP5033387U JP5033387U JPS63157925U JP S63157925 U JPS63157925 U JP S63157925U JP 5033387 U JP5033387 U JP 5033387U JP 5033387 U JP5033387 U JP 5033387U JP S63157925 U JPS63157925 U JP S63157925U
Authority
JP
Japan
Prior art keywords
reference circle
susceptor
wafer
radius
vapor phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5033387U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5033387U priority Critical patent/JPS63157925U/ja
Publication of JPS63157925U publication Critical patent/JPS63157925U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図および第2図は本考案の一実施例を示し
第1図は平面図、第2図は第1図の2―2線拡大
断面図、第3図および第4図はそれぞれ異なる形
状をした本考案の他の実施例における平面図、第
5図および第6図は従来例を示し第5図は平面図
、第6図は第5図の6―6線拡大断面図である。 13……ウエハ、21,31,36……サセプ
タ、22,22a,22b……ザグリ、23……
基準円、24……ふくらみ。
Figures 1 and 2 show an embodiment of the present invention, Figure 1 is a plan view, Figure 2 is an enlarged sectional view taken along line 2-2 in Figure 1, and Figures 3 and 4 are different shapes. 5 and 6 show a conventional example, FIG. 5 is a plan view, and FIG. 6 is an enlarged sectional view taken along the line 6--6 in FIG. 5. 13... Wafer, 21, 31, 36... Susceptor, 22, 22a, 22b... Counterbore, 23...
Reference circle, 24...bulge.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 気相成長装置のサセプタにおいて、ウエハを載
置するザグリの外周形状を、前記ウエハ外径より
僅かに大きい円を基準円としこの基準円の半径の
1/2ないし1/1.1の半径をもつて、前記基
準円の外側へ1ないし4mmふくらむ円弧を2ない
し6箇所有するように形成した気相成長装置のサ
セプタ。
In the susceptor of a vapor phase growth apparatus, the outer circumferential shape of the counterbore on which the wafer is placed is set to a circle slightly larger than the outer diameter of the wafer as a reference circle, and the radius is 1/2 to 1/1.1 of the radius of this reference circle. A susceptor for a vapor phase growth apparatus is formed to have two to six arcs extending 1 to 4 mm outward from the reference circle.
JP5033387U 1987-04-02 1987-04-02 Pending JPS63157925U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5033387U JPS63157925U (en) 1987-04-02 1987-04-02

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5033387U JPS63157925U (en) 1987-04-02 1987-04-02

Publications (1)

Publication Number Publication Date
JPS63157925U true JPS63157925U (en) 1988-10-17

Family

ID=30873601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5033387U Pending JPS63157925U (en) 1987-04-02 1987-04-02

Country Status (1)

Country Link
JP (1) JPS63157925U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681951A (en) * 1980-11-10 1981-07-04 Toshiba Corp Holder of semiconductor substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681951A (en) * 1980-11-10 1981-07-04 Toshiba Corp Holder of semiconductor substrate

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