JPS6357737U - - Google Patents
Info
- Publication number
- JPS6357737U JPS6357737U JP15225286U JP15225286U JPS6357737U JP S6357737 U JPS6357737 U JP S6357737U JP 15225286 U JP15225286 U JP 15225286U JP 15225286 U JP15225286 U JP 15225286U JP S6357737 U JPS6357737 U JP S6357737U
- Authority
- JP
- Japan
- Prior art keywords
- view
- susceptor
- recess
- wafer
- phase growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001947 vapour-phase growth Methods 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Description
第１図ａ〜ｃは本考案の一実施例を構造を示す
平面図・部分断面図および部分斜視図、第２図ａ
およびｂは本考案の気相成長層用サセプターにウ
エハーを載置したときの部分断面図および部分平
面図、第３図ａおよびｂは気相成長用サセプター
にウエハーを載置した気相化学反応処置をした後
の部分断面図および部分平面図、第４図ａ〜ｄは
従来の技術による気相成長用サセプターの構造を
示す平面図・部分断面図およびウエハーを載置し
たときの部分断面図・部分平面図、第５図ａ〜ｃ
は従来の技術よる気相成長用サセプターにウエハ
ーを載置し気相化学反応処理をした後の部分断面
図・部分平面図およびウエハーの断面図。
１……サセプター、２……凹部、２Ａ，２Ｂ…
…溝部、３……ウエハー、３Ａ……ＯＦ部、４，
４Ａ……気相成長層。
Figures 1 a to c are a plan view, partial sectional view, and partial perspective view showing the structure of an embodiment of the present invention, and Figure 2 a
and b are a partial cross-sectional view and a partial plan view when a wafer is placed on the susceptor for vapor-phase growth layer of the present invention, and FIGS. 3a and b are vapor-phase chemical reactions when the wafer is placed on the susceptor for vapor-phase growth layer. A partial cross-sectional view and a partial plan view after the treatment, and FIGS. 4a to 4-d are a plan view and partial cross-sectional view showing the structure of a susceptor for vapor phase growth according to the conventional technology, and a partial cross-sectional view when a wafer is placed.・Partial plan view, Figure 5 a-c
These are a partial cross-sectional view, a partial plan view, and a cross-sectional view of the wafer after the wafer is placed on a susceptor for vapor phase growth and subjected to a gas phase chemical reaction treatment according to the conventional technology. 1... Susceptor, 2... Recess, 2A, 2B...
...Groove portion, 3...Wafer, 3A...OF section, 4,
4A...Vapour-phase growth layer.
Claims (1)
長用サセプターにおいて、前記ウエハーよりも小
さい部分が前記凹部の底部として残存して成る溝
を前記凹部の底部の周辺に備えてなることを特徴
とする気相成長用サセプター。 A susceptor for vapor phase growth having a recess for placing a wafer, characterized in that a groove is provided around the bottom of the recess in which a portion smaller than the wafer remains as the bottom of the recess. Susceptor for vapor phase growth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15225286U JPS6357737U (en) | 1986-10-02 | 1986-10-02 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15225286U JPS6357737U (en) | 1986-10-02 | 1986-10-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6357737U true JPS6357737U (en) | 1988-04-18 |
Family
ID=31070062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15225286U Pending JPS6357737U (en) | 1986-10-02 | 1986-10-02 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6357737U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5352370A (en) * | 1976-10-25 | 1978-05-12 | Hitachi Ltd | Wafer susceptor |
| JPS5353962A (en) * | 1976-10-27 | 1978-05-16 | Oki Electric Ind Co Ltd | Production of semicnductor wafers |
-
1986
- 1986-10-02 JP JP15225286U patent/JPS6357737U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5352370A (en) * | 1976-10-25 | 1978-05-12 | Hitachi Ltd | Wafer susceptor |
| JPS5353962A (en) * | 1976-10-27 | 1978-05-16 | Oki Electric Ind Co Ltd | Production of semicnductor wafers |