JPH03115669U - - Google Patents
Info
- Publication number
- JPH03115669U JPH03115669U JP2528690U JP2528690U JPH03115669U JP H03115669 U JPH03115669 U JP H03115669U JP 2528690 U JP2528690 U JP 2528690U JP 2528690 U JP2528690 U JP 2528690U JP H03115669 U JPH03115669 U JP H03115669U
- Authority
- JP
- Japan
- Prior art keywords
- gas blowing
- silicon
- film
- carbon
- phase growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007664 blowing Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 239000010408 film Substances 0.000 claims 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000002131 composite material Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000012071 phase Substances 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は本考案の一実施例を示す気相成長装置
の縦断面図、第２図は従来装置の縦断面図、第３
図は第２図の−線による断面図でサセプタお
よびノズルのみを示す図、第４図は従来装置によ
るスリツプの発生状況を示す図である。
１２……反応室、１３……サセプタ、１５……
ウエハ（基板）、１６……ＲＦコイル、１９，２
２……ノズル、１９ａ，２２ａ……ガス吹出孔、
Ｓ……スリツプ。
Fig. 1 is a longitudinal cross-sectional view of a vapor phase growth apparatus showing an embodiment of the present invention, Fig. 2 is a longitudinal cross-sectional view of a conventional apparatus, and Fig. 3 is a longitudinal cross-sectional view of a conventional vapor growth apparatus.
This figure is a sectional view taken along the line -- in FIG. 2, showing only the susceptor and nozzle, and FIG. 4 is a diagram showing the occurrence of slips in the conventional device. 12...Reaction chamber, 13...Susceptor, 15...
Wafer (substrate), 16...RF coil, 19,2
2... Nozzle, 19a, 22a... Gas blowing hole,
S...Slip.
Claims (1)
ている基板に対して反応ガスを供給し、前記基板
の表面に薄膜を形成するための気相成長装置用ガ
ス吹出ノズルにおいて、該ノズルの少なくともガ
ス吹出部の近傍を、炭素、窒化珪素もしくは炭化
珪素の単味部材または炭素もしくは窒化珪素の基
材表面に珪素膜もしくは炭化珪素膜をコーテイン
グした複合部材によつて形成したことを特徴とす
る気相成長装置用ガス吹出ノズル。 In a gas blowing nozzle for a vapor phase growth apparatus for supplying a reaction gas to a substrate placed in a reaction chamber and heated to a predetermined reaction temperature to form a thin film on the surface of the substrate, at least The vicinity of the gas blowing part is formed of a single member made of carbon, silicon nitride, or silicon carbide, or a composite member in which the surface of a base material of carbon or silicon nitride is coated with a silicon film or a silicon carbide film. Gas blowing nozzle for phase growth equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2528690U JPH03115669U (en) | 1990-03-13 | 1990-03-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2528690U JPH03115669U (en) | 1990-03-13 | 1990-03-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03115669U true JPH03115669U (en) | 1991-11-29 |
Family
ID=31528223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2528690U Pending JPH03115669U (en) | 1990-03-13 | 1990-03-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03115669U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005333091A (en) * | 2004-05-21 | 2005-12-02 | Nec Electronics Corp | Semiconductor producing system |
-
1990
- 1990-03-13 JP JP2528690U patent/JPH03115669U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005333091A (en) * | 2004-05-21 | 2005-12-02 | Nec Electronics Corp | Semiconductor producing system |
| JP4673578B2 (en) * | 2004-05-21 | 2011-04-20 | ルネサスエレクトロニクス株式会社 | Semiconductor manufacturing equipment |
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