JPS63121426U - - Google Patents
Info
- Publication number
- JPS63121426U JPS63121426U JP1244887U JP1244887U JPS63121426U JP S63121426 U JPS63121426 U JP S63121426U JP 1244887 U JP1244887 U JP 1244887U JP 1244887 U JP1244887 U JP 1244887U JP S63121426 U JPS63121426 U JP S63121426U
- Authority
- JP
- Japan
- Prior art keywords
- quartz
- single crystal
- crystal layer
- substrate
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 229910021489 α-quartz Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図Ａ及びＢは製法例を示す工程図である。
１はα―石英、２はａ―Ｓｉ：Ｈ層、３はＳｉ
単結晶層、４は半導体装置用基板である。
FIGS. 1A and 1B are process diagrams showing an example of the manufacturing method. 1 is α-quartz, 2 is a-Si:H layer, 3 is Si
The single crystal layer 4 is a semiconductor device substrate.
Claims (1)
装置用基板。 A substrate for semiconductor devices that has a silicon single crystal layer on α-quartz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1244887U JPS63121426U (en) | 1987-01-30 | 1987-01-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1244887U JPS63121426U (en) | 1987-01-30 | 1987-01-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63121426U true JPS63121426U (en) | 1988-08-05 |
Family
ID=30800583
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1244887U Pending JPS63121426U (en) | 1987-01-30 | 1987-01-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63121426U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0289374A (en) * | 1988-09-27 | 1990-03-29 | Hitachi Constr Mach Co Ltd | Manufacture of silicon thin film piezoresistance element |
-
1987
- 1987-01-30 JP JP1244887U patent/JPS63121426U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0289374A (en) * | 1988-09-27 | 1990-03-29 | Hitachi Constr Mach Co Ltd | Manufacture of silicon thin film piezoresistance element |
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