JPH01108952U - - Google Patents
Info
- Publication number
- JPH01108952U JPH01108952U JP290188U JP290188U JPH01108952U JP H01108952 U JPH01108952 U JP H01108952U JP 290188 U JP290188 U JP 290188U JP 290188 U JP290188 U JP 290188U JP H01108952 U JPH01108952 U JP H01108952U
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- layer
- insulating layer
- single crystal
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
第１図Ａ乃至Ｅは本考案一実施例に係る製造工
程図である。
１…単結晶Ｓｉ基板（第１の単結晶半導体層）
、４…第１のスピネル膜（第１の単結晶絶縁層）
、５…単結晶Ｓｉ膜（単結畳晶ゲート層）、６…
第２のスピネル膜（第２の単結晶絶縁膜）、７…
単結晶Ｓｉ膜（第２の単結晶半導体層）、…ｐ
チヤネルのＮＯＳデバイス、…ｎチヤネルのＭ
ＯＳデバイス。
1A to 1E are manufacturing process diagrams according to an embodiment of the present invention. 1... Single crystal Si substrate (first single crystal semiconductor layer)
, 4...first spinel film (first single crystal insulating layer)
, 5... Single crystal Si film (single crystal gate layer), 6...
Second spinel film (second single crystal insulating film), 7...
Single crystal Si film (second single crystal semiconductor layer),...p
NOS device for channel,...M for n channel
OS device.
Claims (1)
層と、該単結晶半導体層上に形成された第１の単
結晶絶縁層と、該第１の単結晶絶縁層上にゲート
として形成された単結晶ゲート層と、該単結晶ゲ
ート層上に形成された第２の単結晶絶縁層と、該
第２の単結晶絶縁層上に形成された第２のチヤネ
ル部を有する第２の単結晶半導体層とからなるこ
とを特徴とする半導体集積回路装置。 a first single-crystal semiconductor layer having a first channel portion; a first single-crystal insulating layer formed on the single-crystal semiconductor layer; and a gate formed on the first single-crystal insulating layer. A second single crystal having a single crystal gate layer, a second single crystal insulating layer formed on the single crystal gate layer, and a second channel portion formed on the second single crystal insulating layer. A semiconductor integrated circuit device comprising a semiconductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP290188U JPH01108952U (en) | 1988-01-13 | 1988-01-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP290188U JPH01108952U (en) | 1988-01-13 | 1988-01-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01108952U true JPH01108952U (en) | 1989-07-24 |
Family
ID=31204074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP290188U Pending JPH01108952U (en) | 1988-01-13 | 1988-01-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01108952U (en) |
-
1988
- 1988-01-13 JP JP290188U patent/JPH01108952U/ja active Pending
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