JPS61166528U - - Google Patents
Info
- Publication number
- JPS61166528U JPS61166528U JP5056185U JP5056185U JPS61166528U JP S61166528 U JPS61166528 U JP S61166528U JP 5056185 U JP5056185 U JP 5056185U JP 5056185 U JP5056185 U JP 5056185U JP S61166528 U JPS61166528 U JP S61166528U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- semiconductor device
- seed crystal
- insulating layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
Description
第１図は本考案半導体装置の一実施例を示す断
面図、第２図及び第３図は夫々本考案の他の実施
例を示す断面図、第４図は従来の半導体装置の例
を示す断面図である。
１は半導体基板、１ａは種結晶部、１ｂはメタ
ルシリサイド部、２は絶縁層、３は半導体層であ
る。
FIG. 1 is a cross-sectional view showing one embodiment of the semiconductor device of the present invention, FIGS. 2 and 3 are cross-sectional views showing other embodiments of the present invention, and FIG. 4 is an example of a conventional semiconductor device. FIG. 1 is a semiconductor substrate, 1a is a seed crystal part, 1b is a metal silicide part, 2 is an insulating layer, and 3 is a semiconductor layer.
Claims (1)
板上の絶縁層上に単結晶薄膜を形成してなる半導
体装置に於いて、 上記種結晶部の少なくとも一部に上記半導体基
板と高融点金属との化合物を有することを特徴と
する半導体装置。[Claims for Utility Model Registration] In a semiconductor device in which a part of a semiconductor substrate is used as a seed crystal and a single crystal thin film is formed on an insulating layer on the semiconductor substrate, at least part of the seed crystal part A semiconductor device comprising a compound of the above semiconductor substrate and a high melting point metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5056185U JPS61166528U (en) | 1985-04-04 | 1985-04-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5056185U JPS61166528U (en) | 1985-04-04 | 1985-04-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61166528U true JPS61166528U (en) | 1986-10-16 |
Family
ID=30568811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5056185U Pending JPS61166528U (en) | 1985-04-04 | 1985-04-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61166528U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0745519A (en) * | 1993-07-27 | 1995-02-14 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its manufacture |
-
1985
- 1985-04-04 JP JP5056185U patent/JPS61166528U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0745519A (en) * | 1993-07-27 | 1995-02-14 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its manufacture |
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