JPH028032U - - Google Patents
Info
- Publication number
- JPH028032U JPH028032U JP8324788U JP8324788U JPH028032U JP H028032 U JPH028032 U JP H028032U JP 8324788 U JP8324788 U JP 8324788U JP 8324788 U JP8324788 U JP 8324788U JP H028032 U JPH028032 U JP H028032U
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- semiconductor device
- impurity diffusion
- diffusion region
- field oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Description
第１図は本考案による半導体装置の一実施例の
要部を示す断端面図、第２図は第１図例の製造方
法を示す断端面図、第３図は第１図例を使用して
ｎＭＯＳ ＦＥＴを製造する工程を示す断端面図
、第４図はＰＳＧ膜及び窒化シリコン膜のエツチ
ング速度を示す図、第５図は従来の半導体装置の
要部を示す断端面図、第６図は第５図例を使用し
てｎＭＯＳ ＦＥＴを製造する工程を示す断端面
図である。
１……Ｐ型シリコン基板、２，３……フイール
ド酸化膜、９……ソース領域（不純物拡散領域）
、１０……ドレイン領域（不純物拡散領域）、１
１……ＰＳＧ膜（酸化シリコン膜）、１５，１６
……コンタクトホール、１９，２１……アルミニ
ウム配線層（金属配線層）、２２，２３……Ｓｉ
３Ｎ４膜（窒化シリコン膜）。
FIG. 1 is a cross-sectional view showing a main part of an embodiment of a semiconductor device according to the present invention, FIG. 2 is a cross-sectional view showing a manufacturing method of the example in FIG. 1, and FIG. FIG. 4 is a diagram showing the etching rate of the PSG film and silicon nitride film, and FIG. 5 is a cross-sectional diagram showing the main parts of a conventional semiconductor device. , FIG. 6 is a cross-sectional view showing a process of manufacturing an nMOS FET using the example shown in FIG. 1... P-type silicon substrate, 2, 3... Field oxide film, 9... Source region (impurity diffusion region)
, 10... drain region (impurity diffusion region), 1
1...PSG film (silicon oxide film), 15, 16
... Contact hole, 19, 21 ... Aluminum wiring layer (metal wiring layer), 22, 23 ... Si
3N4 film (silicon nitride film) .
Claims (1)
けて成り、 該フイールド酸化膜に隣接して不純物拡散領域
を形成した後、該不純物拡散領域上に酸化シリコ
ン膜を形成し、次いで、該酸化シリコン膜にコン
タクトホールを形成した後、該コンタクトホール
を介して、金属配線層を上記不純物拡散領域にコ
ンタクトさせるように成された半導体装置におい
て、 上記フイールド酸化膜の端部上面に窒化シリコ
ン膜を設けたことを特徴とする半導体装置。[Claims for Utility Model Registration] A field oxide film is provided on the surface side of a silicon substrate, an impurity diffusion region is formed adjacent to the field oxide film, and then a silicon oxide film is formed on the impurity diffusion region. Then, in the semiconductor device, a contact hole is formed in the silicon oxide film, and then a metal wiring layer is brought into contact with the impurity diffusion region through the contact hole, an upper surface of an end of the field oxide film. A semiconductor device characterized in that a silicon nitride film is provided on the semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8324788U JPH028032U (en) | 1988-06-23 | 1988-06-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8324788U JPH028032U (en) | 1988-06-23 | 1988-06-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH028032U true JPH028032U (en) | 1990-01-18 |
Family
ID=31307972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8324788U Pending JPH028032U (en) | 1988-06-23 | 1988-06-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH028032U (en) |
-
1988
- 1988-06-23 JP JP8324788U patent/JPH028032U/ja active Pending
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