JPS62192639U - - Google Patents
Info
- Publication number
- JPS62192639U JPS62192639U JP7949586U JP7949586U JPS62192639U JP S62192639 U JPS62192639 U JP S62192639U JP 7949586 U JP7949586 U JP 7949586U JP 7949586 U JP7949586 U JP 7949586U JP S62192639 U JPS62192639 U JP S62192639U
- Authority
- JP
- Japan
- Prior art keywords
- film
- integrated circuit
- semiconductor integrated
- circuit device
- passivation film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Description
第１図は、本考案の半導体集積回路装置の断面
図、第２図は各パツシベーシヨン膜の表面電荷密
度Ｎｆを示す説明図、第３図及び第４図は、従来
の半導体集積回路の断面図である。
１……Ｓｉ基体、２……パツシベーシヨン膜、
３……電極、４……シリコンナイトライド膜、５
……プラスチツク、６……チヤージ、７……Ｐ反
転層、１０……シリカ膜。
FIG. 1 is a cross-sectional view of the semiconductor integrated circuit device of the present invention, FIG. 2 is an explanatory diagram showing the surface charge density N f of each passivation film, and FIGS. 3 and 4 are cross-sectional views of a conventional semiconductor integrated circuit. It is a diagram. 1... Si substrate, 2... Passivation film,
3... Electrode, 4... Silicon nitride film, 5
...Plastic, 6...Charge, 7...P inversion layer, 10...Silica film.
Claims (1)
けた半導体集積回路装置上に、最終パツシベーシ
ヨン膜を設けた半導体集積回路装置において、 前記パツシベーシヨン膜及び前記電極に接して
シリカ膜が形成され、さらにシリカ膜上にシリコ
ンオキシナイトライド膜が積層されていることを
特徴とする半導体集積回路装置。[Claims for Utility Model Registration] In a semiconductor integrated circuit device in which a final passivation film is provided on a semiconductor integrated circuit device in which a passivation film and an electrode are provided on a Si substrate, a silica film is provided in contact with the passivation film and the electrode. What is claimed is: 1. A semiconductor integrated circuit device comprising: a silicon oxynitride film formed on the silica film;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7949586U JPS62192639U (en) | 1986-05-28 | 1986-05-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7949586U JPS62192639U (en) | 1986-05-28 | 1986-05-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62192639U true JPS62192639U (en) | 1987-12-08 |
Family
ID=30929407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7949586U Pending JPS62192639U (en) | 1986-05-28 | 1986-05-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62192639U (en) |
-
1986
- 1986-05-28 JP JP7949586U patent/JPS62192639U/ja active Pending