JPS62166638U - - Google Patents
Info
- Publication number
- JPS62166638U JPS62166638U JP5370086U JP5370086U JPS62166638U JP S62166638 U JPS62166638 U JP S62166638U JP 5370086 U JP5370086 U JP 5370086U JP 5370086 U JP5370086 U JP 5370086U JP S62166638 U JPS62166638 U JP S62166638U
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- film
- silicon oxide
- semiconductor device
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000009719 polyimide resin Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
第１図は本考案に係る半導体装置の一実施例の
要部拡大断面図、第２図は従来の半導体装置の要
部拡大断面図である。
１：シリコン基板、２：シリコン酸化膜、３：
シリコン窒化膜、４：ノンドープＣＶＤシリコン
酸化膜、５：ポリイミド系樹脂。
FIG. 1 is an enlarged sectional view of a main part of an embodiment of a semiconductor device according to the present invention, and FIG. 2 is an enlarged sectional view of a main part of a conventional semiconductor device. 1: Silicon substrate, 2: Silicon oxide film, 3:
Silicon nitride film, 4: Non-doped CVD silicon oxide film, 5: Polyimide resin.
Claims (1)
窒化膜及びノンドープＣＶＤシリコン酸化膜を順
次形成し、さらにその表面に保護膜としてポリイ
ミド系樹脂をコートしてなる半導体装置において
、前記ポリイミド系樹脂を、上記シリコン酸化膜
、シリコン窒化膜及びノンドープＣＶＤシリコン
酸化膜の各端部が全て露出するように形成したこ
とを特徴とする半導体装置。 In a semiconductor device in which a silicon oxide film, a silicon nitride film, and a non-doped CVD silicon oxide film are sequentially formed on a silicon substrate, and the surface thereof is further coated with a polyimide resin as a protective film, the polyimide resin is A semiconductor device characterized in that each end of an oxide film, a silicon nitride film, and a non-doped CVD silicon oxide film are all exposed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5370086U JPS62166638U (en) | 1986-04-09 | 1986-04-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5370086U JPS62166638U (en) | 1986-04-09 | 1986-04-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62166638U true JPS62166638U (en) | 1987-10-22 |
Family
ID=30880006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5370086U Pending JPS62166638U (en) | 1986-04-09 | 1986-04-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62166638U (en) |
-
1986
- 1986-04-09 JP JP5370086U patent/JPS62166638U/ja active Pending