JPS59103457U - Glass substrate for thin film semiconductor devices - Google Patents

Glass substrate for thin film semiconductor devices

Info

Publication number
JPS59103457U
JPS59103457U JP19833982U JP19833982U JPS59103457U JP S59103457 U JPS59103457 U JP S59103457U JP 19833982 U JP19833982 U JP 19833982U JP 19833982 U JP19833982 U JP 19833982U JP S59103457 U JPS59103457 U JP S59103457U
Authority
JP
Japan
Prior art keywords
glass substrate
thin film
film semiconductor
semiconductor devices
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19833982U
Other languages
Japanese (ja)
Inventor
新保　雅文
Original Assignee
セイコーインスツルメンツ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by セイコーインスツルメンツ株式会社 filed Critical セイコーインスツルメンツ株式会社
Priority to JP19833982U priority Critical patent/JPS59103457U/en
Publication of JPS59103457U publication Critical patent/JPS59103457U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図から第３図は、本考案によるガラス基板を用いた
ときのＴＰＴ及びその製造工程を説明するための図であ
る。 １・・・・・・ガラス基板、２・・・・・・塗布酸化膜
、１０・・・・・・ＴＦＴ、１１．１２・・・・・・基
板表面の凹凸。FIGS. 1 to 3 are diagrams for explaining a TPT using a glass substrate according to the present invention and its manufacturing process. 1...Glass substrate, 2...Coated oxide film, 10...TFT, 11.12...Irregularities on the substrate surface.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 薄膜半導体装置を形成すべきガラス基板において、前記
ガラス基板の表面に塗布酸化膜を塗布後ベークして形成
した絶縁膜を有することを特徴とする薄膜半導体装置用
ガラス基板。1. A glass substrate for a thin film semiconductor device on which a thin film semiconductor device is to be formed, characterized in that the glass substrate has an insulating film formed by applying a coated oxide film on the surface of the glass substrate and then baking it.
JP19833982U 1982-12-28 1982-12-28 Glass substrate for thin film semiconductor devices Pending JPS59103457U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19833982U JPS59103457U (en) 1982-12-28 1982-12-28 Glass substrate for thin film semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19833982U JPS59103457U (en) 1982-12-28 1982-12-28 Glass substrate for thin film semiconductor devices

Publications (1)

Publication Number Publication Date
JPS59103457U true JPS59103457U (en) 1984-07-12

Family

ID=30423902

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19833982U Pending JPS59103457U (en) 1982-12-28 1982-12-28 Glass substrate for thin film semiconductor devices

Country Status (1)

Country Link
JP (1) JPS59103457U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11354445A (en) * 1997-08-26 1999-12-24 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2005294859A (en) * 1997-08-26 2005-10-20 Semiconductor Energy Lab Co Ltd Method for manufacturing semiconductor device
JP2007141945A (en) * 2005-11-15 2007-06-07 Hitachi Displays Ltd Display device and manufacturing method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5180183A (en) * 1975-01-08 1976-07-13 Hitachi Ltd Handotaisochino seizohoho
JPS5352388A (en) * 1976-10-25 1978-05-12 Seiko Epson Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5180183A (en) * 1975-01-08 1976-07-13 Hitachi Ltd Handotaisochino seizohoho
JPS5352388A (en) * 1976-10-25 1978-05-12 Seiko Epson Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11354445A (en) * 1997-08-26 1999-12-24 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2005294859A (en) * 1997-08-26 2005-10-20 Semiconductor Energy Lab Co Ltd Method for manufacturing semiconductor device
JP2007141945A (en) * 2005-11-15 2007-06-07 Hitachi Displays Ltd Display device and manufacturing method thereof

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