JPS59103458U - Glass substrate for thin film semiconductor devices - Google Patents
Glass substrate for thin film semiconductor devicesInfo
- Publication number
- JPS59103458U JPS59103458U JP19834082U JP19834082U JPS59103458U JP S59103458 U JPS59103458 U JP S59103458U JP 19834082 U JP19834082 U JP 19834082U JP 19834082 U JP19834082 U JP 19834082U JP S59103458 U JPS59103458 U JP S59103458U
- Authority
- JP
- Japan
- Prior art keywords
- glass substrate
- thin film
- film semiconductor
- semiconductor devices
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図から第４図は、本考案によるガラス基板を用いた
ときのＴＰＴ及びその製造プロセスを説明するための図
である。
１・・・・・・ガ゛ラス基板、２・・・・・・ｐｓＧ含
有ＳｉＯ２膜、３・・・・・・絶縁膜、１０・・・・・
−ＴＦＴ、１１．１２・・・・・・基板表面の凹凸。1 to 4 are diagrams for explaining the TPT and its manufacturing process when using the glass substrate according to the present invention. 1... Glass substrate, 2... psG-containing SiO2 film, 3... Insulating film, 10...
-TFT, 11.12...Irregularities on the substrate surface.
Claims (1)
記ガラス基板の表面にリンガラスを２〜１０％含む酸化
膜を堆積後８００°Ｃ以上の温度でアニールすることに
より前記酸化膜を少なく共一部に含む絶縁膜を形成して
なる薄膜半導体装置用ガラス基板。In a glass substrate on which a thin film semiconductor device is to be formed, an oxide film containing 2 to 10% phosphorous glass is deposited on the surface of the glass substrate and then annealed at a temperature of 800° C. or higher to reduce the amount of the oxide film to a common portion. A glass substrate for a thin film semiconductor device formed with an insulating film containing the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19834082U JPS59103458U (en) | 1982-12-28 | 1982-12-28 | Glass substrate for thin film semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19834082U JPS59103458U (en) | 1982-12-28 | 1982-12-28 | Glass substrate for thin film semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59103458U true JPS59103458U (en) | 1984-07-12 |
Family
ID=30423904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19834082U Pending JPS59103458U (en) | 1982-12-28 | 1982-12-28 | Glass substrate for thin film semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59103458U (en) |
-
1982
- 1982-12-28 JP JP19834082U patent/JPS59103458U/en active Pending
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