JPS6016560U - Amorphous silicon image sensor - Google Patents
Amorphous silicon image sensorInfo
- Publication number
- JPS6016560U JPS6016560U JP10742183U JP10742183U JPS6016560U JP S6016560 U JPS6016560 U JP S6016560U JP 10742183 U JP10742183 U JP 10742183U JP 10742183 U JP10742183 U JP 10742183U JP S6016560 U JPS6016560 U JP S6016560U
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- image sensor
- silicon layer
- silicon image
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来のイメージセンサの構造の、第２図は本考
案のイメージセンサの構造の断面図である。
図において、１・・・・・・ガラス等の透明絶縁基板、
２・・・・・・透明電極、３・・・・・・透明誘電体膜
、４・・・・・・高抵抗非晶質シリコン、５・・・・・
・Ｐ型非晶質シリコン、６・・・・・・アルミニウム電
極、７・・・・・・チタン電極。FIG. 1 is a cross-sectional view of the structure of a conventional image sensor, and FIG. 2 is a cross-sectional view of the structure of an image sensor according to the present invention. In the figure, 1... a transparent insulating substrate such as glass,
2...Transparent electrode, 3...Transparent dielectric film, 4...High resistance amorphous silicon, 5...
- P-type amorphous silicon, 6... aluminum electrode, 7... titanium electrode.
Claims (1)
、ｌ Ｑｌｏｏｈｍ−α以上の高抵抗非晶質シリコン層
、ｌ Ｑ６ｏｈｍ −ｃｍ以上Ｉ Ｑ”ｏｈｍ −ｃｍ
以下のＰ型非晶質シリコン層、さらに上部個別電極を順
次積層（た非晶質シリコンリニアイメージセンサにおい
て、該上部個別電極とＰ型非晶質シリコン層との間にチ
タン層を挿入したことを特徴とする非晶質シリコンイメ
ージセンサ。On a transparent substrate, at least in order, a transparent electrode, a transparent dielectric film, a high resistance amorphous silicon layer of lQloohm-α or more, and an IQ”ohm-cm or more of lQ6ohm-cm or more.
In an amorphous silicon linear image sensor in which the following P-type amorphous silicon layer and an upper individual electrode are sequentially laminated, a titanium layer is inserted between the upper individual electrode and the P-type amorphous silicon layer. An amorphous silicon image sensor featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10742183U JPS6016560U (en) | 1983-07-11 | 1983-07-11 | Amorphous silicon image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10742183U JPS6016560U (en) | 1983-07-11 | 1983-07-11 | Amorphous silicon image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6016560U true JPS6016560U (en) | 1985-02-04 |
Family
ID=30251001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10742183U Pending JPS6016560U (en) | 1983-07-11 | 1983-07-11 | Amorphous silicon image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6016560U (en) |
-
1983
- 1983-07-11 JP JP10742183U patent/JPS6016560U/en active Pending
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