JPS6268254U - - Google Patents

Info

Publication number
JPS6268254U
JPS6268254U JP16102485U JP16102485U JPS6268254U JP S6268254 U JPS6268254 U JP S6268254U JP 16102485 U JP16102485 U JP 16102485U JP 16102485 U JP16102485 U JP 16102485U JP S6268254 U JPS6268254 U JP S6268254U
Authority
JP
Japan
Prior art keywords
deposited
single crystal
silicon single
semiconductor layer
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16102485U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP16102485U priority Critical patent/JPS6268254U/ja
Publication of JPS6268254U publication Critical patent/JPS6268254U/ja
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Weting (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案の一実施例による化合物半導体
太陽電池の背面図、第２図は同実施例の断面図で
ある。 １：Ｓｉ基板、２：化合物半導体層、３：格子
部、４：除去部、５：裏面電極。 FIG. 1 is a rear view of a compound semiconductor solar cell according to an embodiment of the present invention, and FIG. 2 is a sectional view of the same embodiment. 1: Si substrate, 2: compound semiconductor layer, 3: lattice portion, 4: removed portion, 5: back electrode.

Claims (1)

【実用新案登録請求の範囲】 シリコン単結晶基板上に化合物半導体層を堆積
してなる半導体装置において、 化合物半導体層を堆積させた側と相対する側の
シリコン単結晶基板を局部的に除去してなり、基
板の軽量化を図つたことを特徴とする半導体装置
。[Claim for Utility Model Registration] In a semiconductor device in which a compound semiconductor layer is deposited on a silicon single crystal substrate, the silicon single crystal substrate on the side opposite to the side on which the compound semiconductor layer is deposited is locally removed. A semiconductor device characterized by a lightweight substrate.
JP16102485U 1985-10-18 1985-10-18 Pending JPS6268254U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16102485U JPS6268254U (en) 1985-10-18 1985-10-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16102485U JPS6268254U (en) 1985-10-18 1985-10-18

Publications (1)

Publication Number Publication Date
JPS6268254U true JPS6268254U (en) 1987-04-28

Family

ID=31086958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16102485U Pending JPS6268254U (en) 1985-10-18 1985-10-18

Country Status (1)

Country Link
JP (1) JPS6268254U (en)

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