JPS6382958U - - Google Patents
Info
- Publication number
- JPS6382958U JPS6382958U JP17700286U JP17700286U JPS6382958U JP S6382958 U JPS6382958 U JP S6382958U JP 17700286 U JP17700286 U JP 17700286U JP 17700286 U JP17700286 U JP 17700286U JP S6382958 U JPS6382958 U JP S6382958U
- Authority
- JP
- Japan
- Prior art keywords
- photovoltaic device
- based semiconductor
- crystalline silicon
- silicon
- support substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000010248 power generation Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
第１図は本考案光起電力装置の基本構成を示す
模式的断面図であつて、１は支持基板、３は半導
体膜、３ｄ１は第１不純物層、３ｉは光活性層、
３ｄ２は第２不純物層、を夫々示している。
FIG. 1 is a schematic cross-sectional view showing the basic structure of the photovoltaic device of the present invention, in which 1 is a support substrate, 3 is a semiconductor film, 3d is a first impurity layer, 3i is a photoactive layer,
3d and 2 indicate the second impurity layer, respectively.
Claims (1)
を発電に寄与する光活性層とした光起電力装置に
於いて、上記支持基板と光活性層との間に一導電
型の結晶シリコン系半導体薄膜からなる不純物層
を配置したことを特徴とする光起電力装置。 (2) 上記結晶シリコン系半導体は多結晶シリコ
ンであることを特徴とした実用新案登録請求の範
囲第１項記載の光起電力装置。 (3) 上記結晶シリコン系半導体は多結晶シリコ
ンカーバイドであることを特徴とした実用新案登
録請求の範囲第１項記載の光起電力装置。[Scope of Claim for Utility Model Registration] (1) In a photovoltaic device in which an amorphous semiconductor containing silicon is provided on a support substrate as a photoactive layer that contributes to power generation, a claim is made between the support substrate and the photoactive layer. 1. A photovoltaic device characterized in that an impurity layer made of a crystalline silicon-based semiconductor thin film of one conductivity type is disposed on the substrate. (2) The photovoltaic device according to claim 1, wherein the crystalline silicon-based semiconductor is polycrystalline silicon. (3) The photovoltaic device according to claim 1, wherein the crystalline silicon-based semiconductor is polycrystalline silicon carbide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17700286U JPS6382958U (en) | 1986-11-18 | 1986-11-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17700286U JPS6382958U (en) | 1986-11-18 | 1986-11-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6382958U true JPS6382958U (en) | 1988-05-31 |
Family
ID=31117790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17700286U Pending JPS6382958U (en) | 1986-11-18 | 1986-11-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6382958U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5664476A (en) * | 1979-08-30 | 1981-06-01 | Plessey Overseas | Armophous silicon solar battery |
-
1986
- 1986-11-18 JP JP17700286U patent/JPS6382958U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5664476A (en) * | 1979-08-30 | 1981-06-01 | Plessey Overseas | Armophous silicon solar battery |
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