JPS58135940U - Continuous vapor phase growth equipment - Google Patents
Continuous vapor phase growth equipmentInfo
- Publication number
- JPS58135940U JPS58135940U JP3205682U JP3205682U JPS58135940U JP S58135940 U JPS58135940 U JP S58135940U JP 3205682 U JP3205682 U JP 3205682U JP 3205682 U JP3205682 U JP 3205682U JP S58135940 U JPS58135940 U JP S58135940U
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- phase growth
- plate
- growth atmosphere
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は連続気相成長装置の断面図、第２図は゛第１図
の上面図、第３図ロはこの考案の１実施例にかかるプレ
ートの正面図、同図すは図ａの断面図、第４図はプレー
トの凹部を説明するための断面図、第５図ａ−，’ ｂ
はいずれも夫々が別の１実施例のプレートの凹部を示す
断面図、第６図ａ、 ｂはいずれも夫々が凹部の実施
例を示す上面図、第７図は従来のプレートとこれに載置
したウェハの状態を示す断面図、第８図はこの考案の１
実施例のプレートとこれに載置されたウェハの状態を示
す断面図、第９図および第１０図はウェハの温度分布に
関し第９図は従来、第１０図はこの考案の１実施例につ
き示す線図、第１１図および第１２図はウェハの気相成
長膜の膜厚分布に関し第１１図は従来、第１２図はこの
考案の１実施例につき示す線図である。
１・・・・・・気相成長雰囲気部、２．２′・・・・・
・ガス給排口、３・・・・・・移動ブロックヒータ部、
４．１１・・・・・・プレート、１２．１２’、１２“
・・・・・・プレートの凹部。Figure 1 is a sectional view of a continuous vapor phase growth apparatus, Figure 2 is a top view of Figure 1, and Figure 3B is a front view of a plate according to an embodiment of this invention; Figure 4 is a sectional view for explaining the concave portion of the plate, Figure 5 a-, 'b
6A and 6B are top views each showing an embodiment of the recess, and FIG. 7 is a sectional view of a conventional plate and a plate mounted thereon. Figure 8 is a cross-sectional view showing the state of the wafer placed on the wafer.
9 and 10 are cross-sectional views showing the state of the plate of the embodiment and the wafer placed thereon. FIG. 9 shows the temperature distribution of the wafer, and FIG. 9 shows the conventional one, and FIG. 10 shows one embodiment of the invention. The diagrams, FIGS. 11 and 12, relate to the film thickness distribution of a vapor-phase grown film on a wafer. FIG. 11 is a conventional diagram, and FIG. 12 is a diagram showing one embodiment of this invention. 1... Vapor phase growth atmosphere section, 2.2'...
・Gas supply/exhaust port, 3...Moving block heater section,
4.11...Plate, 12.12', 12"
・・・・・・Concave part of the plate.
Claims (1)
記気相成長雰囲気部内を半導体ウェハを連続して通過さ
せるために半導体ウエノ１を上部に設置したプレート上
に載置し前記気相成長雰囲気部内を通過する移動ブロッ
クヒータ部とを具備し、前記プレートはその上面に載置
した半導体ウエノ１の下方へ凸なる反りの発生に対応し
ウェハの周縁には反り発生後も常に接触する凹部を有す
ることを特徴とする連続気相成長装置。In order to continuously pass the semiconductor wafer through the vapor phase growth atmosphere formed in the vapor phase growth atmosphere, the semiconductor wafer 1 is placed on a plate placed on top of the vapor phase growth atmosphere. The plate is provided with a movable block heater section that passes through the growth atmosphere, and the plate responds to the occurrence of downwardly convex warpage of the semiconductor wafer 1 placed on the top surface thereof, and always contacts the periphery of the wafer even after the warpage occurs. A continuous vapor phase growth apparatus characterized by having a recess.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3205682U JPS58135940U (en) | 1982-03-09 | 1982-03-09 | Continuous vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3205682U JPS58135940U (en) | 1982-03-09 | 1982-03-09 | Continuous vapor phase growth equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58135940U true JPS58135940U (en) | 1983-09-13 |
Family
ID=30043692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3205682U Pending JPS58135940U (en) | 1982-03-09 | 1982-03-09 | Continuous vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58135940U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005039121A (en) * | 2003-07-17 | 2005-02-10 | Naoetsu Electronics Co Ltd | Normal pressure cvd device |
-
1982
- 1982-03-09 JP JP3205682U patent/JPS58135940U/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005039121A (en) * | 2003-07-17 | 2005-02-10 | Naoetsu Electronics Co Ltd | Normal pressure cvd device |
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