JPH01129259U - - Google Patents
Info
- Publication number
- JPH01129259U JPH01129259U JP2232688U JP2232688U JPH01129259U JP H01129259 U JPH01129259 U JP H01129259U JP 2232688 U JP2232688 U JP 2232688U JP 2232688 U JP2232688 U JP 2232688U JP H01129259 U JPH01129259 U JP H01129259U
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- reaction tube
- holding
- substrate
- inclined plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000000197 pyrolysis Methods 0.000 claims 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Description
第１図は本考案に係るＭＯＣＶＤ装置の概略断
面図であり、第２Ａ図、第２Ｂ図および第２Ｃ図
は本考案に係るＭＯＣＶＤ装置にて可動傾斜板の
角度に応じたＩｎＰ成長層厚さのガス流れ方向の
分布を示すグラフであり、第３図は従来のＭＯＣ
ＶＤ装置の概略断面図であり、および、第４図は
傾斜面サセプタのある従来のＭＯＣＶＤ装置の概
略断面図である。
１……反応管、２……半導体基板、３……サセ
プタ、２１……可動傾斜板、２３Ａ，２３Ｂ……
操作ロツド、θ……傾斜角度。
FIG. 1 is a schematic cross-sectional view of the MOCVD apparatus according to the present invention, and FIGS. 2A, 2B, and 2C show the thickness of the InP growth layer according to the angle of the movable inclined plate in the MOCVD apparatus according to the present invention. Fig. 3 is a graph showing the distribution in the gas flow direction of the conventional MOC.
FIG. 4 is a schematic cross-sectional view of a VD device, and FIG. 4 is a schematic cross-sectional view of a conventional MOCVD device with an inclined surface susceptor. DESCRIPTION OF SYMBOLS 1... Reaction tube, 2... Semiconductor substrate, 3... Susceptor, 21... Movable inclined plate, 23A, 23B...
Operation rod, θ...Inclination angle.
Claims (1)
らなる有機金属熱分解成長用装置において、前記
反応管１内に前記基板保持用サセプタ３と対面し
て、傾斜角度を変えることのできる可動傾斜板２
１が配置されていることを特徴とする有機金属熱
分解成長用装置。 In an apparatus for organic metal pyrolysis growth consisting of a reaction tube, a susceptor for holding a substrate, and a heating device, a movable inclined plate 2 is provided in the reaction tube 1, facing the susceptor 3 for holding a substrate, and whose inclination angle can be changed.
1 is arranged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2232688U JPH01129259U (en) | 1988-02-24 | 1988-02-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2232688U JPH01129259U (en) | 1988-02-24 | 1988-02-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01129259U true JPH01129259U (en) | 1989-09-04 |
Family
ID=31240339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2232688U Pending JPH01129259U (en) | 1988-02-24 | 1988-02-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01129259U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002261021A (en) * | 2001-02-28 | 2002-09-13 | Japan Pionics Co Ltd | Apparatus and method for vapor-phase growth |
-
1988
- 1988-02-24 JP JP2232688U patent/JPH01129259U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002261021A (en) * | 2001-02-28 | 2002-09-13 | Japan Pionics Co Ltd | Apparatus and method for vapor-phase growth |
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