JPH024237U - - Google Patents
Info
- Publication number
- JPH024237U JPH024237U JP8271288U JP8271288U JPH024237U JP H024237 U JPH024237 U JP H024237U JP 8271288 U JP8271288 U JP 8271288U JP 8271288 U JP8271288 U JP 8271288U JP H024237 U JPH024237 U JP H024237U
- Authority
- JP
- Japan
- Prior art keywords
- dry etching
- electrode
- etching device
- semiconductor substrate
- thermocouple
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims 3
- 238000009529 body temperature measurement Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
Landscapes
- Drying Of Semiconductors (AREA)
Description
第１図および第２図はそれぞれ本考案の実施例
を説明するための断面図である。
尚、図において、１……熱電対、２……温調器
、３……電極、４……排気口、５……真空チヤン
バー、６……半導体基板、７……対向電極、８…
…真空チヤンバー、９……対向上部電極、１０…
…熱電体、１１……ガス温調器、１２……シーケ
ンサー、１３……下部電極、１４……半導体基板
、である。
FIG. 1 and FIG. 2 are sectional views for explaining an embodiment of the present invention, respectively. In the figure, 1...thermocouple, 2...temperature controller, 3...electrode, 4...exhaust port, 5...vacuum chamber, 6...semiconductor substrate, 7...counter electrode, 8...
...Vacuum chamber, 9...Top electrode, 10...
... thermoelectric body, 11 ... gas temperature controller, 12 ... sequencer, 13 ... lower electrode, 14 ... semiconductor substrate.
Claims (1)
印加する電極を設けたチヤンバー内に導入管より
ガスを供給したプラズマを発生させて半導体基板
表面の薄膜をエツチングするドライエツチング装
置において、該半導体基板を支持する電極表面近
傍に温測用熱電対を設置したことを特徴とするド
ライエツチング装置。 A dry etching apparatus that etches a thin film on the surface of a semiconductor substrate by generating plasma by supplying gas from an introduction tube into a chamber equipped with an exhaust tube for maintaining a high vacuum and an electrode for applying high-frequency power. A dry etching device characterized in that a thermocouple for temperature measurement is installed near the surface of an electrode supporting the dry etching device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8271288U JPH024237U (en) | 1988-06-21 | 1988-06-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8271288U JPH024237U (en) | 1988-06-21 | 1988-06-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH024237U true JPH024237U (en) | 1990-01-11 |
Family
ID=31307455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8271288U Pending JPH024237U (en) | 1988-06-21 | 1988-06-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH024237U (en) |
-
1988
- 1988-06-21 JP JP8271288U patent/JPH024237U/ja active Pending