JPS63164220U - - Google Patents

Info

Publication number
JPS63164220U
JPS63164220U JP5713787U JP5713787U JPS63164220U JP S63164220 U JPS63164220 U JP S63164220U JP 5713787 U JP5713787 U JP 5713787U JP 5713787 U JP5713787 U JP 5713787U JP S63164220 U JPS63164220 U JP S63164220U
Authority
JP
Japan
Prior art keywords
cvd apparatus
wafer
hot plate
heat source
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5713787U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5713787U priority Critical patent/JPS63164220U/ja
Publication of JPS63164220U publication Critical patent/JPS63164220U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例を示す概略構成図、
第2図は従来のCVD装置を示す概略構成図であ
る。 1:基台、2:ホツトプレート、3:ノズル、
4:ウエーハ、5:加熱源。
FIG. 1 is a schematic configuration diagram showing an embodiment of the present invention;
FIG. 2 is a schematic configuration diagram showing a conventional CVD apparatus. 1: Base, 2: Hot plate, 3: Nozzle,
4: wafer, 5: heating source.

Claims (1)

【実用新案登録請求の範囲】 (1) 縦形常圧CVD装置において、ホツトプレ
ートに−族化合物半導体ウエーハをセツトす
る場合、前記ホツトプレートと対向する位置に、
輻射熱を利用する加熱源を設けたことを特徴とす
るCVD装置。 (2) 加熱源は、ウエーハをセツトするときのみ
作動し、前記ウエーハのセツト終了後には前記加
熱源を装置外部へ移動させる機構を有する実用新
案登録請求の範囲第1項記載のCVD装置。
[Claims for Utility Model Registration] (1) In a vertical atmospheric pressure CVD apparatus, when a - group compound semiconductor wafer is set on a hot plate, at a position opposite to the hot plate,
A CVD apparatus characterized by being provided with a heating source that uses radiant heat. (2) The CVD apparatus according to claim 1, wherein the heat source is activated only when setting the wafer, and has a mechanism for moving the heat source to the outside of the apparatus after the wafer is set.
JP5713787U 1987-04-15 1987-04-15 Pending JPS63164220U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5713787U JPS63164220U (en) 1987-04-15 1987-04-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5713787U JPS63164220U (en) 1987-04-15 1987-04-15

Publications (1)

Publication Number Publication Date
JPS63164220U true JPS63164220U (en) 1988-10-26

Family

ID=30886569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5713787U Pending JPS63164220U (en) 1987-04-15 1987-04-15

Country Status (1)

Country Link
JP (1) JPS63164220U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019102523A1 (en) * 2017-11-21 2019-05-31 佐伯 午郎 Diffusion device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019102523A1 (en) * 2017-11-21 2019-05-31 佐伯 午郎 Diffusion device

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