JPS60140773U - Molecular beam crystal growth equipment - Google Patents

Molecular beam crystal growth equipment

Info

Publication number
JPS60140773U
JPS60140773U JP2856384U JP2856384U JPS60140773U JP S60140773 U JPS60140773 U JP S60140773U JP 2856384 U JP2856384 U JP 2856384U JP 2856384 U JP2856384 U JP 2856384U JP S60140773 U JPS60140773 U JP S60140773U
Authority
JP
Japan
Prior art keywords
molecular beam
crystal growth
molecular
growth equipment
source cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2856384U
Other languages
Japanese (ja)
Inventor
淳二 斉藤
Original Assignee
富士通株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士通株式会社 filed Critical 富士通株式会社
Priority to JP2856384U priority Critical patent/JPS60140773U/en
Publication of JPS60140773U publication Critical patent/JPS60140773U/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来の分子線エピタキシャル成長装置の要部断
面図、第２図は本考案の分子線エピタキシャル成長装置
の部分断面図を示す。 図中、１は容器、６は分子線源セルマウントフランジ、
７は分子線源セル電極フランジ、８は窒素ボックス、９
と１０は弁、１１は断熱チューブ、を示す。FIG. 1 is a sectional view of a main part of a conventional molecular beam epitaxial growth apparatus, and FIG. 2 is a partial sectional view of the molecular beam epitaxial growth apparatus of the present invention. In the figure, 1 is a container, 6 is a molecular beam source cell mount flange,
7 is a molecular beam source cell electrode flange, 8 is a nitrogen box, 9
10 indicates a valve, and 11 indicates a heat insulating tube.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 超高真空中で、二種類以上の半導体結晶構成元素を各々
分子線源セルの中で加熱して分子線を形成し、加熱され
た半導体単結晶基板に照射することにより、該基板上に
不合物半導体のエピタキシャル成長を行なう分子線結晶
成長装置において、該分子線源セルを納めた真空フラン
ジ部に乾燥し゛　た窒素ガス雰囲気の囲いを設けたこと
を特徴とする分子線結晶成長装置。In an ultra-high vacuum, two or more types of semiconductor crystal constituent elements are heated in a molecular beam source cell to form molecular beams, and the heated single crystal substrate is irradiated with the molecular beams, thereby forming defects on the substrate. 1. A molecular beam crystal growth apparatus for epitaxial growth of physical semiconductors, characterized in that an enclosure containing a dry nitrogen gas atmosphere is provided in a vacuum flange portion housing the molecular beam source cell.
JP2856384U 1984-02-29 1984-02-29 Molecular beam crystal growth equipment Pending JPS60140773U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2856384U JPS60140773U (en) 1984-02-29 1984-02-29 Molecular beam crystal growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2856384U JPS60140773U (en) 1984-02-29 1984-02-29 Molecular beam crystal growth equipment

Publications (1)

Publication Number Publication Date
JPS60140773U true JPS60140773U (en) 1985-09-18

Family

ID=30526556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2856384U Pending JPS60140773U (en) 1984-02-29 1984-02-29 Molecular beam crystal growth equipment

Country Status (1)

Country Link
JP (1) JPS60140773U (en)

Similar Documents

Publication Publication Date Title
JPS60140773U (en) Molecular beam crystal growth equipment
JPS6013740U (en) Sample holding device
JPS6169824U (en)
JPS6051389U (en) Insulated support structure
JPS58172434U (en) Ionization film deposition equipment
JPS59103756U (en) Electrode for high frequency plasma excitation
JPS58135940U (en) Continuous vapor phase growth equipment
JPS59103769U (en) Molecular beam source cell
JPS5991728U (en) Semiconductor substrate holding jig
JPS5933240U (en) centrifugal dryer
JPS60149131U (en) Vapor phase growth equipment
JPS59103432U (en) Vapor phase thin film production equipment
JPS59145563U (en) Film forming equipment
JPS60103827U (en) semiconductor manufacturing equipment
JPH0350328U (en)
JPS59159941U (en) Semiconductor device manufacturing equipment
JPS6059998U (en) Radioactive gas immobilization disposal equipment
JPS6025747U (en) Vacuum evaporation mask
JPS59103988U (en) Vacuum flange mechanism
JPS59133663U (en) Electron beam evaporation equipment
JPH0367440U (en)
JPS62157968U (en)
JPH042590U (en)
JPS60185331U (en) Vapor phase growth equipment
JPH01119064U (en)