JPS62157968U - - Google Patents
Info
- Publication number
- JPS62157968U JPS62157968U JP4491186U JP4491186U JPS62157968U JP S62157968 U JPS62157968 U JP S62157968U JP 4491186 U JP4491186 U JP 4491186U JP 4491186 U JP4491186 U JP 4491186U JP S62157968 U JPS62157968 U JP S62157968U
- Authority
- JP
- Japan
- Prior art keywords
- ion
- electrode
- thin film
- irradiate
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
第１図は本考案の一実施例を示す説明図、第２
図は第１図の一部詳細断面図、第３図は第１図の
一部詳細断面図、第４図は本考案の作用の説明図
、第５図は本考案の作用を説明する特性図である
。
１，２……イオン源、３……電子ビーム蒸着装
置、４……基板、５……基板ホルダー、７，１２
……プラズマ電極、６……永久磁石、８，１３…
…加速電極、９……接地電極、１０……高エネル
ギーイオンビーム、１４……低エネルギーイオン
ビーム、１５……薄膜。
Fig. 1 is an explanatory diagram showing one embodiment of the present invention;
The figure is a partially detailed sectional view of Fig. 1, Fig. 3 is a partially detailed sectional view of Fig. 1, Fig. 4 is an explanatory diagram of the operation of the present invention, and Fig. 5 is a characteristic explaining the operation of the present invention. It is a diagram. 1, 2... Ion source, 3... Electron beam evaporation device, 4... Substrate, 5... Substrate holder, 7, 12
...Plasma electrode, 6...Permanent magnet, 8,13...
...accelerating electrode, 9...ground electrode, 10...high energy ion beam, 14...low energy ion beam, 15...thin film.
Claims (1)
イオン源と、蒸着装置とを備えたものにおいて、
電極間距離が異なるイオン源のイオンビームを引
き出すプラズマ電極と加速電極とを有することを
特徴とする薄膜製作装置。 In one equipped with a plurality of ion sources that irradiate the same substrate and a vapor deposition device in the same vacuum container,
A thin film manufacturing apparatus characterized by having a plasma electrode and an accelerating electrode for extracting ion beams from an ion source with different distances between the electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4491186U JPS62157968U (en) | 1986-03-28 | 1986-03-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4491186U JPS62157968U (en) | 1986-03-28 | 1986-03-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62157968U true JPS62157968U (en) | 1987-10-07 |
Family
ID=30863167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4491186U Pending JPS62157968U (en) | 1986-03-28 | 1986-03-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62157968U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02163362A (en) * | 1988-06-10 | 1990-06-22 | Ulvac Corp | Formation of thin compound film by ion mixing method |
-
1986
- 1986-03-28 JP JP4491186U patent/JPS62157968U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02163362A (en) * | 1988-06-10 | 1990-06-22 | Ulvac Corp | Formation of thin compound film by ion mixing method |