JPS61199860U - - Google Patents

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Publication number
JPS61199860U
JPS61199860U JP8383285U JP8383285U JPS61199860U JP S61199860 U JPS61199860 U JP S61199860U JP 8383285 U JP8383285 U JP 8383285U JP 8383285 U JP8383285 U JP 8383285U JP S61199860 U JPS61199860 U JP S61199860U
Authority
JP
Japan
Prior art keywords
target
electron emission
beam irradiation
irradiation device
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8383285U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8383285U priority Critical patent/JPS61199860U/ja
Publication of JPS61199860U publication Critical patent/JPS61199860U/ja
Pending legal-status Critical Current

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  • Electron Sources, Ion Sources (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本考案の一実施例の概略説明図、第
2図は、第1図の電位を説明する線図である。 1……ガス導入系、2……イオン源、3……プ
ラズマ領域、4……加速電源、5……減速電源、
6……バイアス電源、7……電子放出源電源、9
……ターゲツト、10……加速電極、11……減
速電極。
FIG. 1 is a schematic explanatory diagram of an embodiment of the present invention, and FIG. 2 is a diagram illustrating the potential in FIG. 1. 1...Gas introduction system, 2...Ion source, 3...Plasma region, 4...Acceleration power supply, 5...Deceleration power supply,
6...Bias power supply, 7...Electron emission source power supply, 9
...Target, 10...Acceleration electrode, 11...Deceleration electrode.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 少なくとも3枚の電極を具備するイオン源と、
イオンが、照射されるターゲツトと、核イオン源
とターゲツトの間に配置された電子放出源と、そ
れらを真空に保持するチヤンバーより成るイオン
ビーム照射装置において、ターゲツトに最も近い
電極を電子放出源に対して負の電圧にバイアスす
ることを特徴とするイオンビーム照射装置。
an ion source comprising at least three electrodes;
In an ion beam irradiation device that consists of a target to be irradiated with ions, an electron emission source placed between the nuclear ion source and the target, and a chamber that holds them in a vacuum, the electrode closest to the target is used as the electron emission source. An ion beam irradiation device characterized by biasing to a negative voltage.
JP8383285U 1985-06-05 1985-06-05 Pending JPS61199860U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8383285U JPS61199860U (en) 1985-06-05 1985-06-05

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8383285U JPS61199860U (en) 1985-06-05 1985-06-05

Publications (1)

Publication Number Publication Date
JPS61199860U true JPS61199860U (en) 1986-12-13

Family

ID=30632813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8383285U Pending JPS61199860U (en) 1985-06-05 1985-06-05

Country Status (1)

Country Link
JP (1) JPS61199860U (en)

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