JPH0374461U

JPH0374461U -

Info

Publication number: JPH0374461U
Application number: JP13614689U
Authority: JP
Priority date: 1989-11-22
Filing date: 1989-11-22
Publication date: 1991-07-26

Description

[Brief explanation of the drawing]

第１図は本考案の実施例にかかるイオンビーム
電流可変装置の構成図。第２図はパルスデユーテ
イが５０％以下の時の偏向電極に印加する電圧と
、スリツトを通過するビーム電流の波形図。第３
図はパルスデユーテイが５０％以上の時の偏向電
極に印加する電圧と、スリツトを通過するビーム
電流の波形図。第４図は従来例に係るイオン注入
装置の概略構成図。第５図はイオンビーム電流密
度の分布図。第６図はスリツトを通つたイオンビ
ーム電流密度の分布図。１……イオン源、２……輸送チヤンバ、３……
スリツト駆動モータ、４……スリツト、５……タ
ーゲツトチヤンバ、６……ターゲツト、７……偏
向電極、８……偏向電源、９……スリツト穴。 FIG. 1 is a configuration diagram of an ion beam current variable device according to an embodiment of the present invention. Figure 2 is a waveform diagram of the voltage applied to the deflection electrode and the beam current passing through the slit when the pulse duty is 50% or less. Third
The figure is a waveform diagram of the voltage applied to the deflection electrode and the beam current passing through the slit when the pulse duty is 50% or more. FIG. 4 is a schematic configuration diagram of a conventional ion implantation apparatus. Figure 5 is a distribution diagram of ion beam current density. Figure 6 is a distribution diagram of the ion beam current density passing through the slit. 1...Ion source, 2...Transport chamber, 3...
Slit drive motor, 4...Slit, 5...Target chamber, 6...Target, 7...Deflection electrode, 8...Deflection power source, 9...Slit hole.

Claims

[Scope of utility model registration request]

An ion source that generates ions, a transport chamber that is evacuated and forms a space for transporting the ions generated in the ion source, and a vacuum that is connected to the transport chamber and holds the target to be irradiated with ions. a target chamber provided in the transport chamber, a slit provided in the transport chamber and having a slit hole on the axis of the ion beam, and a deflection electrode provided in the transport chamber in front of the slit to deflect the ion beam; It consists of a deflection power supply that applies voltage to the deflection electrode, and by applying a pulse voltage to the deflection electrode with a voltage amplitude that deflects the ion beam so that it does not pass through the slit hole, the amount of beam current that reaches the target can be varied. A variable beam current amount device in an ion implanter featuring features.