JPH0277850U - - Google Patents
Info
- Publication number
- JPH0277850U JPH0277850U JP15772188U JP15772188U JPH0277850U JP H0277850 U JPH0277850 U JP H0277850U JP 15772188 U JP15772188 U JP 15772188U JP 15772188 U JP15772188 U JP 15772188U JP H0277850 U JPH0277850 U JP H0277850U
- Authority
- JP
- Japan
- Prior art keywords
- space
- ions
- potential barrier
- ion implantation
- pass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- 238000005036 potential barrier Methods 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 1
Description
第１図はこの考案の一実施例の基本的な構成を
示す概念図、第２図はビームフイルタ電極３がイ
オンビーム６に及ぼす静電レンズ効果を簡略化し
て示す説明図、第３図は従来のイオン注入装置の
基本的な構成を示す概念図である。
２……加速管、３……ビームフイルタ電極、６
……イオンビーム、１０……電圧可変型ビームフ
イルタ電源、１１……照射対象物。
FIG. 1 is a conceptual diagram showing the basic configuration of an embodiment of this invention, FIG. 2 is an explanatory diagram showing a simplified electrostatic lens effect exerted on the ion beam 6 by the beam filter electrode 3, and FIG. 1 is a conceptual diagram showing the basic configuration of a conventional ion implanter. 2...Acceleration tube, 3...Beam filter electrode, 6
...Ion beam, 10...Variable voltage beam filter power supply, 11...Irradiation target.
Claims (1)
位障壁を形成した空間に導き、この空間を通過し
た所定の価数のイオンを加速して照射対象物に注
入するようにしたイオン注入装置において、 前記所定の価数のイオンが前記空間を選択的に
通過する範囲内で前記電位障壁が変化するように
、可変電圧範囲が設定された電圧可変型ビームフ
イルタ電源を設けたことを特徴とするイオン注入
装置。[Claims for Utility Model Registration] An ion beam is guided into a space in which a potential barrier is formed by a beam filter electrode, and ions of a predetermined valence that pass through this space are accelerated and injected into an irradiation target. In the ion implantation apparatus, a voltage variable beam filter power source is provided with a variable voltage range set so that the potential barrier changes within a range in which ions of the predetermined valence selectively pass through the space. An ion implantation device featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15772188U JPH0277850U (en) | 1988-12-02 | 1988-12-02 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15772188U JPH0277850U (en) | 1988-12-02 | 1988-12-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0277850U true JPH0277850U (en) | 1990-06-14 |
Family
ID=31437415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15772188U Pending JPH0277850U (en) | 1988-12-02 | 1988-12-02 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0277850U (en) |
-
1988
- 1988-12-02 JP JP15772188U patent/JPH0277850U/ja active Pending
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