JPS6350874U - - Google Patents
Info
- Publication number
- JPS6350874U JPS6350874U JP14571786U JP14571786U JPS6350874U JP S6350874 U JPS6350874 U JP S6350874U JP 14571786 U JP14571786 U JP 14571786U JP 14571786 U JP14571786 U JP 14571786U JP S6350874 U JPS6350874 U JP S6350874U
- Authority
- JP
- Japan
- Prior art keywords
- evaporation
- ion
- source
- ion beam
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010884 ion-beam technique Methods 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims 6
- 230000008020 evaporation Effects 0.000 claims 6
- 238000011144 upstream manufacturing Methods 0.000 claims 1
- 238000007738 vacuum evaporation Methods 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 1
Description
第１図は、この考案の一実施例に係るイオン蒸
着薄膜形成装置を示す概略図である。第２図は、
第１図の蒸着源におけるるつぼ部分の平面の一例
を示す概略図である。第３図は、従来のイオン蒸
着薄膜形成装置の一例を示す概略図である。
４……基板、６……蒸着源、１０……電子ビー
ム、１４……るつぼ、１６……蒸着材料、２２…
…イオン源、２６……イオンビーム、３０……偏
向コイル、３４……走査電極、３８……制御装置
。
FIG. 1 is a schematic diagram showing an ion vapor deposition thin film forming apparatus according to an embodiment of this invention. Figure 2 shows
FIG. 2 is a schematic diagram showing an example of a plane of a crucible portion in the vapor deposition source of FIG. 1; FIG. 3 is a schematic diagram showing an example of a conventional ion vapor deposition thin film forming apparatus. 4... Substrate, 6... Vapor deposition source, 10... Electron beam, 14... Crucible, 16... Vapor deposition material, 22...
...Ion source, 26...Ion beam, 30...Deflection coil, 34...Scanning electrode, 38...Control device.
Claims (1)
源とイオンビームを射出するイオン源とを備え、
基板に対して真空蒸着とイオンビーム照射とを行
うことによつて基板上に薄膜を形成する装置にお
いて、イオン源からのイオンビームの経路上に、
当該イオンビームを蒸着源における蒸着に使用す
る前段側のるつぼ内の蒸着材料に向けて偏向させ
ることができる偏向手段を設けていることを特徴
とするイオン蒸着薄膜形成装置。 Equipped with an evaporation source having a plurality of crucibles for storing evaporation materials and an ion source for emitting an ion beam,
In an apparatus that forms a thin film on a substrate by performing vacuum evaporation and ion beam irradiation on the substrate, on the path of the ion beam from the ion source,
An ion evaporation thin film forming apparatus characterized by being provided with a deflecting means capable of deflecting the ion beam toward a evaporation material in a crucible on the upstream side used for evaporation in a evaporation source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14571786U JPS6350874U (en) | 1986-09-22 | 1986-09-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14571786U JPS6350874U (en) | 1986-09-22 | 1986-09-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6350874U true JPS6350874U (en) | 1988-04-06 |
Family
ID=31057515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14571786U Pending JPS6350874U (en) | 1986-09-22 | 1986-09-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6350874U (en) |
-
1986
- 1986-09-22 JP JP14571786U patent/JPS6350874U/ja active Pending
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