JPS60149131U - Vapor phase growth equipment - Google Patents
Vapor phase growth equipmentInfo
- Publication number
- JPS60149131U JPS60149131U JP3728884U JP3728884U JPS60149131U JP S60149131 U JPS60149131 U JP S60149131U JP 3728884 U JP3728884 U JP 3728884U JP 3728884 U JP3728884 U JP 3728884U JP S60149131 U JPS60149131 U JP S60149131U
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- phase growth
- reaction vessel
- growth equipment
- reactant gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来の気相成長装置の構成を示す一部断面図、
第２図は第１図の装置に於ける加熱板の構成を示す断面
図、第３図は本考案の一実施例に係る気相成長装置の一
部断面図、第４図は第３図の装置に於ける加熱板の構成
を示す断面図である。
２１・・・反応容器、２２・・・加熱基台、２３・・・
加熱板、２４・・・半導体ウェハ、２５・・・凹部、２
６・・・中 〜心部材。−FIG. 1 is a partial cross-sectional view showing the configuration of a conventional vapor phase growth apparatus.
FIG. 2 is a sectional view showing the configuration of the heating plate in the apparatus shown in FIG. 1, FIG. 3 is a partial sectional view of a vapor phase growth apparatus according to an embodiment of the present invention, and FIG. FIG. 3 is a sectional view showing the configuration of a heating plate in the device. 21... Reaction container, 22... Heating base, 23...
heating plate, 24... semiconductor wafer, 25... recess, 2
6...Middle ~ core member. −
Claims (1)
複数の半導体ウェハを保持する加熱板を複数枚組合わせ
て構成される加熱基台と、前記反応容器内の前記半導体
ウェハを加熱する加熱源と、前記反応容器内に反応ガス
を供給する反応ガス供給手段とを具備したことを特徴と
する気相成長装置。゛ A reaction vessel, a heating base configured by combining a plurality of heating plates installed in the reaction vessel and holding a plurality of semiconductor wafers on both sides, and a heating base that heats the semiconductor wafers in the reaction vessel. What is claimed is: 1. A vapor phase growth apparatus comprising: a reactant gas source; and a reactant gas supply means for supplying a reactant gas into the reaction vessel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3728884U JPS60149131U (en) | 1984-03-15 | 1984-03-15 | Vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3728884U JPS60149131U (en) | 1984-03-15 | 1984-03-15 | Vapor phase growth equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60149131U true JPS60149131U (en) | 1985-10-03 |
Family
ID=30543234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3728884U Pending JPS60149131U (en) | 1984-03-15 | 1984-03-15 | Vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60149131U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6090894A (en) * | 1983-10-20 | 1985-05-22 | Fujitsu Ltd | Vapor phase growing apparatus |
-
1984
- 1984-03-15 JP JP3728884U patent/JPS60149131U/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6090894A (en) * | 1983-10-20 | 1985-05-22 | Fujitsu Ltd | Vapor phase growing apparatus |
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