JPS60146337U - Semiconductor device manufacturing equipment - Google Patents
Semiconductor device manufacturing equipmentInfo
- Publication number
- JPS60146337U JPS60146337U JP3473584U JP3473584U JPS60146337U JP S60146337 U JPS60146337 U JP S60146337U JP 3473584 U JP3473584 U JP 3473584U JP 3473584 U JP3473584 U JP 3473584U JP S60146337 U JPS60146337 U JP S60146337U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- device manufacturing
- pel
- jar
- manufacturing equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図乃至第４図は従来例を示し、第１図は石英反応管
を用いたエピタキシャル成長装置を示す断面図、第２図
はペルジャーを用いたエピタキシャル成長装置を示す断
面図、第３図はマウンドが形成された単結晶基板を示す
断面図、第４図は第１図に示す装置を改良したエピタキ
シャル成長装置を示す断面図である。第５図は本考案の
一実施例を示すエピタキシャル成長装置を示す断面図、
第６図及び第７図は第５図に示す装置のサセプタ及び単
結晶基板の保持部を示す側面図及び底面図である。
４・・・単結晶基板、２０・・・ペルジャー、２１・・
・ソース気体の供給路（供給管）、２４・・・サスブタ
ホルダー、２５・・・サセプタ、２６・・・サセプタの
加熱′装置（高周波誘導コイル）、２７・・・基板ホル
ダＯFigures 1 to 4 show conventional examples, Figure 1 is a sectional view showing an epitaxial growth apparatus using a quartz reaction tube, Figure 2 is a sectional view showing an epitaxial growth apparatus using a Pelger, and Figure 3 is a sectional view showing an epitaxial growth apparatus using a Pelger. FIG. 4 is a cross-sectional view showing an epitaxial growth apparatus that is an improved version of the apparatus shown in FIG. 1. FIG. 5 is a sectional view showing an epitaxial growth apparatus showing an embodiment of the present invention;
6 and 7 are a side view and a bottom view showing a susceptor and a single-crystal substrate holding portion of the device shown in FIG. 5, respectively. 4... Single crystal substrate, 20... Pelger, 21...
・Source gas supply path (supply pipe), 24...Susbuter holder, 25...Susceptor, 26...Susceptor heating device (high frequency induction coil), 27...Substrate holder O
Claims (1)
れた複数のサセプタと、サセプタの主面に単結晶基板を
保持する複数の基板ホルダーと、サセプタの加熱装置と
、ペルジャー内にエピタキシャル成長に用いるソース気
体を供給する供給路とを含む半導体装置の製造装置。A Pel Jar, a plurality of susceptors arranged approximately along the inner surface of the Pel Jar, a plurality of substrate holders that hold a single crystal substrate on the main surface of the susceptor, a heating device for the susceptor, and a source gas used for epitaxial growth inside the Pel Jar. A semiconductor device manufacturing apparatus including a supply path for supplying.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3473584U JPS60146337U (en) | 1984-03-09 | 1984-03-09 | Semiconductor device manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3473584U JPS60146337U (en) | 1984-03-09 | 1984-03-09 | Semiconductor device manufacturing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60146337U true JPS60146337U (en) | 1985-09-28 |
Family
ID=30538386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3473584U Pending JPS60146337U (en) | 1984-03-09 | 1984-03-09 | Semiconductor device manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60146337U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52133884A (en) * | 1976-05-06 | 1977-11-09 | Hitachi Ltd | Gas phase chemical reactor |
| JPS5713795U (en) * | 1980-06-30 | 1982-01-23 |
-
1984
- 1984-03-09 JP JP3473584U patent/JPS60146337U/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52133884A (en) * | 1976-05-06 | 1977-11-09 | Hitachi Ltd | Gas phase chemical reactor |
| JPS5713795U (en) * | 1980-06-30 | 1982-01-23 |
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