JPH034028Y2 - - Google Patents
Info
- Publication number
- JPH034028Y2 JPH034028Y2 JP15023387U JP15023387U JPH034028Y2 JP H034028 Y2 JPH034028 Y2 JP H034028Y2 JP 15023387 U JP15023387 U JP 15023387U JP 15023387 U JP15023387 U JP 15023387U JP H034028 Y2 JPH034028 Y2 JP H034028Y2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- substrate
- quartz tube
- heat sink
- internal heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000010453 quartz Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000003708 ampul Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 3
- 150000001721 carbon Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- IYSYLWYGCWTJSG-XFXZXTDPSA-N n-tert-butyl-1-phenylmethanimine oxide Chemical compound CC(C)(C)[N+](\[O-])=C\C1=CC=CC=C1 IYSYLWYGCWTJSG-XFXZXTDPSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
【考案の詳細な説明】
（産業上の利用分野）
この考案は半導体結晶の結晶成長装置に関する
ものである。[Detailed description of the invention] (Industrial application field) This invention relates to a crystal growth apparatus for semiconductor crystals.
（従来の技術）
従来のこの種結晶成長装置は、第２図に示した
ように、Ａのように棒状の石英をヒートシンク１
０として用いたもの、Ｂのように石英管１の下端
に外部ヒートシンク１１を取付けて基板３上にエ
ピタキシヤル成長させている。(Prior Art) In this conventional seed crystal growth apparatus, as shown in FIG.
As shown in Figure 0 and B, an external heat sink 11 is attached to the lower end of the quartz tube 1 and epitaxial growth is performed on the substrate 3.
また、この場合の成長温度は850℃以上とし、
温度差は最大が３〜４℃／cmとなつている。 In addition, the growth temperature in this case should be 850℃ or higher,
The maximum temperature difference is 3-4°C/cm.
（考案が解決しようとする問題点）
しかしながら、従来のZnSeエピタキシヤル成
長においては、外部ヒートシンク１１や石英ヒー
トシンク１０を用いて成長させた場合に熱伝導率
が悪いため、結晶析出時に生じる生成熱を短時間
に効率よく逃がすことが困難である。(Problem to be solved by the invention) However, in conventional ZnSe epitaxial growth, thermal conductivity is poor when the external heat sink 11 or quartz heat sink 10 is used for growth. It is difficult to release it efficiently in a short time.
また、このために、結晶成長時にアンプルの結
晶析出部とその上部との間の温度差も余り多くと
ることができないため、結晶成長速度の低下につ
ながつている。 Furthermore, for this reason, it is not possible to maintain a large temperature difference between the crystal precipitation part of the ampoule and its upper part during crystal growth, which leads to a decrease in the crystal growth rate.
さらに、外部ヒートシンクを用いた場合には、
基板結晶の底部とヒートシンクの頭部とが必ずし
も密着しないため、この部分が熱抵抗を大きく
し、ために結晶成長速度の低下原因の一つになつ
ている。 Furthermore, when using an external heat sink,
Since the bottom of the substrate crystal and the head of the heat sink do not necessarily come into close contact with each other, this portion increases thermal resistance, which is one of the causes of a decrease in the crystal growth rate.
そこで、本考案は上記欠点を除去した結晶成長
装置の提供を目的としている。 Therefore, an object of the present invention is to provide a crystal growth apparatus that eliminates the above-mentioned drawbacks.
（問題点を解決するための手段）
上記目的を達成するため、この考案は、−
族化合物の結晶成長装置に関し、有底石英管１内
に棒状の熱伝導率の高い物質からなる内部ヒート
シンク２を収納し、該内部ヒートシンク２の上面
に基板結晶３を当接させる態様で配置し、この基
板結晶３を基板止め４で保持し、この基板止め４
の上端に位置する石英管１の溶着部５を軟化溶着
して基板結晶３を固定した後前記石英管１にメル
ト６を充填して高真空とした後前記石英管１の開
口部を閉じて密封構造とした構成とし、上下に温
度差が形成された溶液により基板結晶上に結晶を
エピタキシヤル成長させる構成にされている。(Means for solving the problem) In order to achieve the above purpose, this invention -
Regarding a crystal growth apparatus for group compounds, an internal heat sink 2 made of a rod-shaped material with high thermal conductivity is housed in a bottomed quartz tube 1, and a substrate crystal 3 is arranged in a manner that it is in contact with the upper surface of the internal heat sink 2. , hold this substrate crystal 3 with a substrate stopper 4, and hold this substrate crystal 3 with a substrate stopper 4.
After fixing the substrate crystal 3 by soft welding the welded part 5 of the quartz tube 1 located at the upper end, the quartz tube 1 is filled with melt 6 and made into a high vacuum, and then the opening of the quartz tube 1 is closed. The structure is a sealed structure, and a crystal is epitaxially grown on a substrate crystal using a solution in which a temperature difference is formed between the upper and lower sides.
（実施例）
以下本考案の一実施例をあらわした図面によつ
て説明する。(Embodiment) An embodiment of the present invention will be described below with reference to the drawings.
第１図において、ａは石英管１を密封構造とし
た成長用アンプルである。この石英管１は有底で
あり、この石英管１内には棒状の熱伝導率の高い
物質からなる内部ヒートシンク２が収納されてい
る。 In FIG. 1, a is a growth ampoule in which a quartz tube 1 has a sealed structure. This quartz tube 1 has a bottom, and an internal heat sink 2 made of a rod-shaped material with high thermal conductivity is housed inside the quartz tube 1.
この熱伝導率の高い物質として用いられる物質
は、緻密質SiC、多孔質SiC、石英ガラス、グラ
フアイト、PBN“ａ”軸、PBN“ｃ”軸等であ
る。 Materials used as this material with high thermal conductivity include dense SiC, porous SiC, quartz glass, graphite, PBN "a" axis, PBN "c" axis, and the like.
この内部ヒートシンク２の基板結晶設置面とな
る上端面は、＃
1500前後でラツピングし、次に＃
4000前後でポリツシングして鏡面状態とされるの
がよい。 The upper end surface of this internal heat sink 2, which will be the substrate crystal installation surface, is wrapped around #1500, and then wrapped around #1500.
It is best to polish it at around 4000 to give it a mirror finish.
また、内部ヒートシンク２として純度の低いカ
ーボンを使用する場合は、このカーボン表面に
SiCやPBNの薄い層を形成すると有効となる。 In addition, when using low-purity carbon as internal heat sink 2, the surface of this carbon
Forming a thin layer of SiC or PBN is effective.
基板止め４は円筒状に形成され、基板結晶３が
溶液６上に浮上らないように溶着部５は外側から
熱を与えて軟化溶着されている。 The substrate stopper 4 is formed in a cylindrical shape, and the welded portion 5 is softened and welded by applying heat from the outside so that the substrate crystal 3 does not float above the solution 6.
さらに、内部ヒートシンク２と基板結晶３の接
触状態は結晶成長に大きな影響を与えるので、両
者の接触面をラツピング及びポリツシング処理す
ると有効であり、第２図の従来例のＡの場合も基
板結晶と石英ヒートシンクとの接触面をラツピン
グ、ポリツシング処理工程は本考案の場合と同様
に適用できる。 Furthermore, since the contact state between the internal heat sink 2 and the substrate crystal 3 has a great influence on crystal growth, it is effective to treat the contact surfaces between the two by lapping and polishing. The lapping and polishing process for the contact surface with the quartz heat sink can be applied in the same manner as in the present invention.
次に結晶成長法は、アンプルａは温度分布の決
められた炉中に垂直に設置し、成長前には予め
Te／Se溶媒とソース結晶とを混合させたものを
用いる。 Next, in the crystal growth method, ampoule a is placed vertically in a furnace with a determined temperature distribution, and before crystal growth,
A mixture of Te/Se solvent and source crystal is used.
また、エピタキシヤル成長時の成長温度は650
℃以上とし、温度差は最大でも10℃／cm前後とす
るのがよい。 In addition, the growth temperature during epitaxial growth is 650
℃ or more, and the temperature difference should be around 10℃/cm at maximum.
なお、内部ヒートシンク２としてカーボンを用
いた場合と石英を用いた場合における同一条件下
での単位時間当りの成長速度を比較すると、カー
ボンの場合は3.0〜5.0μｍ／hrであり、石英の場
合は1.0〜2.0μｍ／hrである。 In addition, when comparing the growth rate per unit time under the same conditions when carbon is used as the internal heat sink 2 and when quartz is used, it is 3.0 to 5.0 μm/hr in the case of carbon and 3.0 to 5.0 μm/hr in the case of quartz. It is 1.0 to 2.0 μm/hr.
さらに、本考案の場合の結晶成長速度は、例え
ば成長温度800〜850℃、温度差4.0〜5.0℃／cmで
は3.0〜5μｍ／hrの均一でフラツトなエピタキシ
ヤル成長面を得ることができる。 Furthermore, the crystal growth rate in the case of the present invention is, for example, 3.0 to 5 .mu.m/hr at a growth temperature of 800 to 850.degree. C. and a temperature difference of 4.0 to 5.0.degree. C./cm, and a uniform and flat epitaxial growth surface can be obtained.
（考案の効果）
以上のように構成した本考案によれば、内部ヒ
ートシンクとして棒状で熱伝導率の高い物質を用
いたため、結晶析出時に生じる生成熱をスムーズ
に逃してやることができる。(Effects of the invention) According to the invention configured as described above, since a rod-shaped material with high thermal conductivity is used as the internal heat sink, the generated heat generated during crystal precipitation can be smoothly dissipated.
また、アンプルの結晶析出部分と上部との温度
差も比較的多くとることが可能なため、成長結晶
の結晶性を損なわず、加えて成長速度を増加させ
ることが可能となつた。 Furthermore, since it is possible to have a relatively large temperature difference between the crystal precipitation part and the upper part of the ampoule, it has become possible to increase the growth rate without impairing the crystallinity of the growing crystal.
さらに、内部ヒートシンクの頭部をラツピン
グ、ポリツシングするため、基板結晶との密着性
は増大し、このため結晶成長速度の増加を助長さ
せることができる。 Furthermore, since the head of the internal heat sink is lapped and polished, its adhesion to the substrate crystal increases, which can help increase the crystal growth rate.
第１図は本考案に係る結晶成長装置の断面図、
第２図Ａ及びＢは従来の結晶成長装置の断面図で
ある。
符号の説明、ａ……アンプル、１……石英管、
２……内部ヒートシンク、３……基板結晶、４…
…基板止め、５……溶着部、６……メルト。
FIG. 1 is a cross-sectional view of a crystal growth apparatus according to the present invention;
FIGS. 2A and 2B are cross-sectional views of a conventional crystal growth apparatus. Explanation of symbols, a... Ampoule, 1... Quartz tube,
2... Internal heat sink, 3... Substrate crystal, 4...
... Board fixing, 5... Welding part, 6... Melt.
Claims (1)
なる内部ヒートシンクを収納し、この内部ヒート
シンクの上面に基板結晶を当接させる態様で配置
し、この基板結晶を基板止めで保持し、この基板
止めの上端に位置する石英管の溶着部を軟化溶着
して基板結晶を固定した後前記石英管にメルトを
充填して高真空とした後前記石英管の開口部を閉
じて密封した構成とし、上下に温度差が形成され
た溶液により基板結晶上に結晶をエピタキシヤル
成長させることを特徴としてなる半導体結晶の結
晶成長装置。 An internal heat sink made of a rod-shaped material with high thermal conductivity is housed in a bottomed quartz tube, a substrate crystal is placed in contact with the top surface of the internal heat sink, and this substrate crystal is held with a substrate stopper. After softening and welding the welded part of the quartz tube located at the upper end of the stopper to fix the substrate crystal, the quartz tube is filled with melt and created a high vacuum, and then the opening of the quartz tube is closed and sealed, A semiconductor crystal crystal growth apparatus characterized by epitaxially growing a crystal on a substrate crystal using a solution in which a temperature difference is formed between the upper and lower sides.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15023387U JPH034028Y2 (en) | 1987-09-30 | 1987-09-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15023387U JPH034028Y2 (en) | 1987-09-30 | 1987-09-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6457637U JPS6457637U (en) | 1989-04-10 |
| JPH034028Y2 true JPH034028Y2 (en) | 1991-02-01 |
Family
ID=31423190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15023387U Expired JPH034028Y2 (en) | 1987-09-30 | 1987-09-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH034028Y2 (en) |
-
1987
- 1987-09-30 JP JP15023387U patent/JPH034028Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6457637U (en) | 1989-04-10 |
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