JPH0482839U - - Google Patents
Info
- Publication number
- JPH0482839U JPH0482839U JP12793390U JP12793390U JPH0482839U JP H0482839 U JPH0482839 U JP H0482839U JP 12793390 U JP12793390 U JP 12793390U JP 12793390 U JP12793390 U JP 12793390U JP H0482839 U JPH0482839 U JP H0482839U
- Authority
- JP
- Japan
- Prior art keywords
- reaction tube
- semiconductor laser
- manufacturing apparatus
- heating
- laser manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 241000700560 Molluscum contagiosum virus Species 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
Description
第１図はこの考案の一実施例である半導体レー
ザ製造装置の断面図、第２図は従来の半導体レー
ザ製造装置の断面図である。図において、１は２
重水冷の反応管、２は冷却水、１４は単結晶基板
、２１は反応ガスの流れ、１０１は可動な高周波
加熱コイル、１０２は可動な発熱するカーボン製
サセプター、１０３は保持具を示す。なお、図中
、同一符号は同一、または相当部分を示す。
FIG. 1 is a cross-sectional view of a semiconductor laser manufacturing apparatus which is an embodiment of this invention, and FIG. 2 is a cross-sectional view of a conventional semiconductor laser manufacturing apparatus. In the diagram, 1 is 2
A heavy water-cooled reaction tube, 2 a cooling water, 14 a single crystal substrate, 21 a flow of reaction gas, 101 a movable high-frequency heating coil, 102 a movable heat-generating carbon susceptor, and 103 a holder. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
Ｄ装置において、前記反応管に対して相対的に加
熱のための電源と発熱体が移動できるようにした
ことを特徴とする半導体レーザ製造装置。 MOCV, which grows crystals on a substrate in a reaction tube
A semiconductor laser manufacturing apparatus in apparatus D, characterized in that a power source for heating and a heating element are movable relative to the reaction tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12793390U JPH0482839U (en) | 1990-11-28 | 1990-11-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12793390U JPH0482839U (en) | 1990-11-28 | 1990-11-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0482839U true JPH0482839U (en) | 1992-07-20 |
Family
ID=31875415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12793390U Pending JPH0482839U (en) | 1990-11-28 | 1990-11-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0482839U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013089682A (en) * | 2011-10-14 | 2013-05-13 | Shin Etsu Handotai Co Ltd | Manufacturing method of epitaxial wafer |
-
1990
- 1990-11-28 JP JP12793390U patent/JPH0482839U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013089682A (en) * | 2011-10-14 | 2013-05-13 | Shin Etsu Handotai Co Ltd | Manufacturing method of epitaxial wafer |
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