JPH02146165U - - Google Patents
Info
- Publication number
- JPH02146165U JPH02146165U JP5432989U JP5432989U JPH02146165U JP H02146165 U JPH02146165 U JP H02146165U JP 5432989 U JP5432989 U JP 5432989U JP 5432989 U JP5432989 U JP 5432989U JP H02146165 U JPH02146165 U JP H02146165U
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- vapor phase
- epitaxial growth
- reaction
- phase epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 239000012808 vapor phase Substances 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 claims 4
- 239000013078 crystal Substances 0.000 claims 1
- 239000004570 mortar (masonry) Substances 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は本考案の気相エピタキシヤル成長装置
の一実施例を示すサセプタの平面図および正面側
断面図、第２図は第１図に示すトレイの断面図、
第３図は従来の縦型式気相エピタキシヤル成長装
置の説明図である。
１……反応管、２……ウエハ、３……サセプタ
、４……原料ガス導入口、５……原料ガス排気口
、１０……トレイ。
1 is a plan view and a front sectional view of a susceptor showing an embodiment of the vapor phase epitaxial growth apparatus of the present invention; FIG. 2 is a sectional view of the tray shown in FIG. 1;
FIG. 3 is an explanatory diagram of a conventional vertical vapor phase epitaxial growth apparatus. DESCRIPTION OF SYMBOLS 1... Reaction tube, 2... Wafer, 3... Susceptor, 4... Source gas inlet, 5... Source gas exhaust port, 10... Tray.
Claims (1)
にウエハをセツトして高温状態に保ち、前記反応
容器内に原料ガスを導入して化学反応を生じさせ
、該反応により前記ウエハ表面に半導体単結晶を
成長させる気相エピタキシヤル成長装置において
、前記サセプタ上部の縁辺部が前記セツトされた
ウエハの表面よりも高くかつ上方に向つて拡径す
る傾斜面を形成するよう擂鉢状に成形されている
ことを特徴とする気相エピタキシヤル成長装置。 A wafer is set on the upper surface of a rotating susceptor installed in a reaction vessel and maintained at a high temperature, and a raw material gas is introduced into the reaction vessel to cause a chemical reaction, and as a result of this reaction, a semiconductor single crystal is formed on the surface of the wafer. In a vapor phase epitaxial growth apparatus for growing wafers, the upper edge of the susceptor is formed into a mortar shape so as to form an inclined surface that is higher than the surface of the set wafer and whose diameter increases upward. A vapor phase epitaxial growth device featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5432989U JPH02146165U (en) | 1989-05-11 | 1989-05-11 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5432989U JPH02146165U (en) | 1989-05-11 | 1989-05-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02146165U true JPH02146165U (en) | 1990-12-12 |
Family
ID=31576296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5432989U Pending JPH02146165U (en) | 1989-05-11 | 1989-05-11 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02146165U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013521655A (en) * | 2010-03-03 | 2013-06-10 | ビーコ・インストゥルメンツ・インコーポレイテッド | Wafer carrier with inclined edges |
| CN105755450A (en) * | 2010-12-30 | 2016-07-13 | 维易科仪器公司 | Wafer Processing With Carrier Extension |
-
1989
- 1989-05-11 JP JP5432989U patent/JPH02146165U/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013521655A (en) * | 2010-03-03 | 2013-06-10 | ビーコ・インストゥルメンツ・インコーポレイテッド | Wafer carrier with inclined edges |
| JP2016184742A (en) * | 2010-03-03 | 2016-10-20 | ビーコ・インストゥルメンツ・インコーポレイテッド | Wafer carrier having tilt edge |
| CN105755450A (en) * | 2010-12-30 | 2016-07-13 | 维易科仪器公司 | Wafer Processing With Carrier Extension |
| US9938621B2 (en) | 2010-12-30 | 2018-04-10 | Veeco Instruments Inc. | Methods of wafer processing with carrier extension |
| US10167554B2 (en) | 2010-12-30 | 2019-01-01 | Veeco Instruments Inc. | Wafer processing with carrier extension |
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