JPS6318618A - Susceptor cover - Google Patents
Susceptor coverInfo
- Publication number
- JPS6318618A JPS6318618A JP16343386A JP16343386A JPS6318618A JP S6318618 A JPS6318618 A JP S6318618A JP 16343386 A JP16343386 A JP 16343386A JP 16343386 A JP16343386 A JP 16343386A JP S6318618 A JPS6318618 A JP S6318618A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- cover
- support base
- present
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000010453 quartz Substances 0.000 claims abstract description 3
- 230000000295 complement effect Effects 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 238000007740 vapor deposition Methods 0.000 abstract description 5
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- 238000000407 epitaxy Methods 0.000 abstract description 2
- 229910003465 moissanite Inorganic materials 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 5
- 238000001947 vapour-phase growth Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VJBCNMFKFZIXHC-UHFFFAOYSA-N azanium;2-(4-methyl-5-oxo-4-propan-2-yl-1h-imidazol-2-yl)quinoline-3-carboxylate Chemical compound N.N1C(=O)C(C(C)C)(C)N=C1C1=NC2=CC=CC=C2C=C1C(O)=O VJBCNMFKFZIXHC-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体製造におけるエピタキシセル気相成長装
置に使用されるサセプター用カバーに関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a cover for a susceptor used in an epitaxy cell vapor phase growth apparatus in semiconductor manufacturing.
（従来の技術）
従来、エピタキシャル気相成長装置に使用するサセプタ
ーとしては、有害ガスの放出がなく、化学的、熱的に安
定な黒鉛基材に炭化珪県を被覆したものが用いられてい
る。そして、通常、半導体のエピタキシャル層を得るた
めには、石英ガラス製の反応管内にサセプターを置ぎ、
この上に半導体基板を載せた後、まず、反応管にＨ２ガ
スを流し、反応管の外部に配設された高周波コイルによ
ってサセプターを高温（約１１００〜１２００℃）に加
熱する。次に、サセプターをこの温度に保持しながら、
１＠２に日Ｃｊ！を加えた混合ガスを流して基板の表面
を数ミクロン気相エツチングした後、Ｈ２及びＨ（ｌを
止め、Ｓ ｉ Ｃ４！４とＨ２０浪合ガス等の反応ガス
を流して基板に半導体（例えばＳｉ）をエピタキシャル
成長させている。さらに、エピタキシャル成長工程が終
了するごとにす廿ブタ−に蒸着生成されたＳｉを取除く
必要があるが、これは）−１２と１１ＣＩの混合ガスを
使った気相エツチングにより取除かれる。(Prior art) Conventionally, as a susceptor used in an epitaxial vapor phase growth apparatus, a graphite base material coated with silicon carbide, which does not emit harmful gases and is chemically and thermally stable, has been used. . Usually, in order to obtain a semiconductor epitaxial layer, a susceptor is placed in a quartz glass reaction tube.
After placing the semiconductor substrate thereon, first, H2 gas is flowed into the reaction tube, and the susceptor is heated to a high temperature (approximately 1100 to 1200° C.) by a high frequency coil disposed outside the reaction tube. Then, while holding the susceptor at this temperature,
Day Cj on 1 @ 2! After the surface of the substrate is vapor-phase etched by several microns by flowing a mixed gas containing a ) is epitaxially grown.Furthermore, it is necessary to remove the Si deposited on the substrate each time the epitaxial growth process is completed, but this is done by vapor phase etching using a mixed gas of -12 and 11CI. removed by.
（発明が解決しようとする問題点）
前述のように、従来の半導体！Ｉ造におけるエピタキシ
ャル成長工程が終了するごとに、１時間程度の時間を必
要とするＨ２とＨＣｆ！の混合ガスを使った気相エツチ
ングによってサセプターに蒸着生成された３ｉを取り除
く必要があるため、エピタキシャル成長装置の実稼動時
間が著しくｎわれている。(Problem to be solved by the invention) As mentioned above, conventional semiconductors! Each time the epitaxial growth process in I-structure is completed, H2 and HCf! Since it is necessary to remove the 3i deposited on the susceptor by vapor phase etching using a mixed gas, the actual operating time of the epitaxial growth apparatus is significantly reduced.
本発明は、従来のエピタキシャル成艮装詔がもつ、以上
の欠点を取り除き、サセプターに蒸着生成されたＳｉを
容易に取除き１９、エピタキシャル成長装置の実稼ｆａ
Ｊ時間を延ばし得るサセプター用カバーを提供すること
を目的とする。The present invention eliminates the above-mentioned drawbacks of the conventional epitaxial growth equipment, easily removes Si deposited on the susceptor19, and improves the actual operation of the epitaxial growth apparatus.
An object of the present invention is to provide a cover for a susceptor that can extend J time.
（問題点を解決するための手段）
本発明の前記目的は、次の構成によって達成される。即
ち、本発明の構成は、上に半導体基板を載せたす廿ブタ
−の上面における露出面を覆っており、高温下で耐触性
を有する板状部材からなることを特徴とするすせブター
用カバーである。(Means for solving the problems) The above object of the present invention is achieved by the following configuration. That is, the structure of the present invention is a flat plate which covers the exposed upper surface of the flat plate on which a semiconductor substrate is placed, and is made of a plate-like member that is resistant to contact at high temperatures. It is a cover for
（作用）
本発明のサセプター用カバーは、上に半導体基板を載せ
たサセプターの上面における露出面を覆った板状部材か
らなるが故に、半導体！Ｉ造におけるエピタキシャル気
相成長工程時に蒸着生成物をサセプター用カバーに付着
させて、蒸椙生成物がサセプターに付着するのを阻止し
得る。(Function) The susceptor cover of the present invention is made of a plate-like member that covers the exposed surface of the upper surface of the susceptor on which a semiconductor substrate is placed, and therefore, the susceptor cover of the present invention is a semiconductor! During the epitaxial vapor phase growth process in I-structure, the vapor deposition product can be attached to the susceptor cover to prevent the vapor deposition product from adhering to the susceptor.
本発明の板状部材は、好ましくは輪郭がサセプターの上
面と同一形状をしているのがよく、また半導体１ｆｆｉ
の下部と相補的な形状を右する穴があけられているのが
よい。The plate-like member of the present invention preferably has a contour that is the same as the upper surface of the susceptor, and the semiconductor 1ffi
It is best to have a hole with a complementary shape to the bottom of the hole.
本発明の根状部材の材料は、好ましくは石英、ＳｉＣ又
はＳｉ３Ｎ４のいずれかであるのがよい。The material of the root member of the present invention is preferably quartz, SiC or Si3N4.
特に好ましくは、３ｉ３Ｎａであるのがよい。Particularly preferred is 3i3Na.
（具体例） 本発明の構成を、間を参照しながら説明する。(Concrete example) The configuration of the present invention will be explained with reference to the following.
第１図は本発明のサセプター用カバーの使用状態を示す
斜視図、第２図は第１図のサセプター用カバーの平面図
、第３図は第２図のｍ−ＦＪｉｇｉ面図である。第１図
から第３図において、■ピタキシャル気相成長装置の反
応管の中に道かれるサセプター１の上に、エピタキシャ
ル成長すべぎシリ」ンウエハー２が置かれており、サセ
プター１の上面のうちシリコンウェハー２によって覆わ
れた部分以外の露出面を覆うように、サセプター用カバ
ー３がサセプター１の上に載せられている。この時、サ
セプター用カバー３は、サセプター１の中央突起部４に
サセプター用カバー３の中央孔５を嵌合することによっ
て位置決めされる。FIG. 1 is a perspective view showing how the susceptor cover of the present invention is used, FIG. 2 is a plan view of the susceptor cover of FIG. 1, and FIG. 3 is a plane view taken along line m-FJigi of FIG. 2. 1 to 3, a silicon wafer 2 to be epitaxially grown is placed on top of a susceptor 1 which is passed into a reaction tube of a pitaxial vapor phase growth apparatus, and a silicon wafer 2 is placed on the top surface of the susceptor 1. A susceptor cover 3 is placed on the susceptor 1 so as to cover the exposed surface other than the portion covered by the susceptor 2. At this time, the susceptor cover 3 is positioned by fitting the center hole 5 of the susceptor cover 3 into the center protrusion 4 of the susceptor 1.
サセプター用カバー３の材質は８１３Ｎ４からなり、形
状は、輪郭が好ましくは一す−セブター１の上面と同じ
であり、直径が７０５ｍｍφの円形状をなしている。中
に直径が１２５ｍのシリコンウェハー２の下部と相補的
な形状を有する穴が６個設けられており、板厚は３Ｍで
ある。またシリコンウェハー２の直径は１００５１７Ｇ
、 ４ ｔｒｔであってもよい。The material of the susceptor cover 3 is 813N4, and the shape is circular, preferably having the same outline as the upper surface of the first scepter 1 and having a diameter of 705 mm. Six holes having a shape complementary to the lower part of the silicon wafer 2 having a diameter of 125 m are provided inside, and the plate thickness is 3M. Also, the diameter of silicon wafer 2 is 100517G
, 4 trt.
さらに、第４図に示すようにサセプター用カバーは適宜
に二分割できるものであってもよく、分割数は二分υ１
に限定されるものではなく、何分割であってもよい。Furthermore, as shown in FIG.
It is not limited to , and may be divided into any number of divisions.
（本発明の効果〉
本発明のサセプター用カバーによれば、半導体製造にお
けるエピタキシャル気相成長工程時に蒸着生成物をサセ
プター用カバーに付着させて、蒸着生成物がサセプター
に付着するのを阻止し得、従って、サセプターの上面を
清浄に維持し１！？るので、サセプターの蒸着生成物の
除去時間を極めて短縮化し得る。(Effects of the present invention) According to the susceptor cover of the present invention, deposition products can be made to adhere to the susceptor cover during the epitaxial vapor phase growth process in semiconductor manufacturing, and the deposition products can be prevented from adhering to the susceptor. Therefore, since the upper surface of the susceptor is kept clean, the time required to remove the vapor deposition product from the susceptor can be extremely shortened.
第１図は本発明の１具体例の斜視図、第２図は本発明の
平面図、第３図は第２図の■−■断面図、第４図は本発
明の他の具体例の斜視図である。
１・・・・・・サセプター、２・・・・・・シリコンウ
ェハー、３・・・・・・サセプター用カバー。
第１図
第４図FIG. 1 is a perspective view of one specific example of the present invention, FIG. 2 is a plan view of the present invention, FIG. 3 is a sectional view taken along the line ■-■ of FIG. 2, and FIG. 4 is a perspective view of another specific example of the present invention. FIG. 1...Susceptor, 2...Silicon wafer, 3...Susceptor cover. Figure 1 Figure 4
Claims (5)
る露出面を覆っており、高温下で耐触性を有する板状部
材からなることを特徴とするサセプター用カバー。(1) A cover for a susceptor, which covers the exposed upper surface of the susceptor on which a semiconductor substrate is placed, and is made of a plate-like member that is resistant to contact at high temperatures.
り、前記半導体基板の下部と相補的な形状を有する穴が
あけられていることを特徴とする特許請求の範囲第１項
に記載のカバー。(2) The susceptor has a contour having the same shape as the upper surface of the susceptor, and a hole having a shape complementary to the lower part of the semiconductor substrate is bored. cover.
徴とする特許請求の範囲第１項又は第２項に記載のカバ
ー。(3) The cover according to claim 1 or 2, wherein the plate-like member is made of Si_3N_4.
特許請求の範囲第１項又は第２項に記載のカバー。(4) The cover according to claim 1 or 2, wherein the plate-like member is made of SiC.
許請求の範囲第１項又は第２項に記載のカバー。(5) The cover according to claim 1 or 2, wherein the plate-like member is made of quartz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16343386A JPS6318618A (en) | 1986-07-11 | 1986-07-11 | Susceptor cover |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16343386A JPS6318618A (en) | 1986-07-11 | 1986-07-11 | Susceptor cover |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6318618A true JPS6318618A (en) | 1988-01-26 |
Family
ID=15773801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16343386A Pending JPS6318618A (en) | 1986-07-11 | 1986-07-11 | Susceptor cover |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6318618A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2641901A1 (en) * | 1989-01-13 | 1990-07-20 | Toshiba Ceramics Co | SUSCEPTOR FOR USE IN A VERTICAL DEVICE FOR REALIZING VAPOR PHASE GROWTH |
| JP2005526394A (en) * | 2002-05-13 | 2005-09-02 | クリー インコーポレイテッド | MOCVD reactor susceptor |
| JP2006173560A (en) * | 2004-11-16 | 2006-06-29 | Sumitomo Electric Ind Ltd | Wafer guide, metal organic vapor phase growing device and method for depositing nitride semiconductor |
| JP4970683B2 (en) * | 2000-01-31 | 2012-07-11 | マットソン テクノロジー インコーポレイテッド | Apparatus and method for epitaxially treating a substrate |
| US8366830B2 (en) | 2003-03-04 | 2013-02-05 | Cree, Inc. | Susceptor apparatus for inverted type MOCVD reactor |
| KR20170138359A (en) * | 2016-06-07 | 2017-12-15 | 어플라이드 머티어리얼스, 인코포레이티드 | Contour pocket and hybrid susceptor for wafer uniformity |
| CN111088522A (en) * | 2019-12-30 | 2020-05-01 | 瀚天天成电子科技（厦门）有限公司 | Top cover structure of silicon carbide epitaxial growth reaction chamber |
-
1986
- 1986-07-11 JP JP16343386A patent/JPS6318618A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2641901A1 (en) * | 1989-01-13 | 1990-07-20 | Toshiba Ceramics Co | SUSCEPTOR FOR USE IN A VERTICAL DEVICE FOR REALIZING VAPOR PHASE GROWTH |
| US5074017A (en) * | 1989-01-13 | 1991-12-24 | Toshiba Ceramics Co., Ltd. | Susceptor |
| JP4970683B2 (en) * | 2000-01-31 | 2012-07-11 | マットソン テクノロジー インコーポレイテッド | Apparatus and method for epitaxially treating a substrate |
| JP2005526394A (en) * | 2002-05-13 | 2005-09-02 | クリー インコーポレイテッド | MOCVD reactor susceptor |
| US8372204B2 (en) | 2002-05-13 | 2013-02-12 | Cree, Inc. | Susceptor for MOCVD reactor |
| US8366830B2 (en) | 2003-03-04 | 2013-02-05 | Cree, Inc. | Susceptor apparatus for inverted type MOCVD reactor |
| JP2006173560A (en) * | 2004-11-16 | 2006-06-29 | Sumitomo Electric Ind Ltd | Wafer guide, metal organic vapor phase growing device and method for depositing nitride semiconductor |
| KR101127748B1 (en) * | 2004-11-16 | 2012-03-23 | 스미토모덴키고교가부시키가이샤 | Wafer guide, mocvd equipment, and nitride semiconductor growth mehtod |
| KR20170138359A (en) * | 2016-06-07 | 2017-12-15 | 어플라이드 머티어리얼스, 인코포레이티드 | Contour pocket and hybrid susceptor for wafer uniformity |
| CN111088522A (en) * | 2019-12-30 | 2020-05-01 | 瀚天天成电子科技（厦门）有限公司 | Top cover structure of silicon carbide epitaxial growth reaction chamber |
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