CN111088522A - Top cover structure of silicon carbide epitaxial growth reaction chamber - Google Patents
Top cover structure of silicon carbide epitaxial growth reaction chamber Download PDFInfo
- Publication number
- CN111088522A CN111088522A CN201911400025.XA CN201911400025A CN111088522A CN 111088522 A CN111088522 A CN 111088522A CN 201911400025 A CN201911400025 A CN 201911400025A CN 111088522 A CN111088522 A CN 111088522A
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- China
- Prior art keywords
- top cover
- epitaxial growth
- silicon carbide
- reaction chamber
- carbide epitaxial
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a top cover structure of a silicon carbide epitaxial growth reaction chamber, which relates to the technical field of epitaxial growth equipment and comprises a top cover body and an inner top cover. The top cover structure is designed and improved, and the inner ring which protrudes upwards is formed on the upper surface of the top cover, so that the interior of the top cover has excellent compression resistance and supporting capacity, the damage phenomenon of the top cover is obviously reduced, the compression resistance is enhanced, and meanwhile, the top cover structure is ingenious and reasonable in design, easy to mold and manufacture, and suitable for popularization and use.
Description
Technical Field
The invention relates to the technical field of epitaxial growth equipment, in particular to a top cover structure of a silicon carbide epitaxial growth reaction chamber.
Background
Because the silicon carbide has the excellent characteristics of large forbidden band width, excellent stability, high thermal conductivity, high critical breakdown field strength, high saturated electron drift velocity and the like, the silicon carbide becomes an ideal semiconductor material for manufacturing high-temperature, high-power, high-frequency and strong-radiation power electronic devices. Compared with the traditional silicon device, the silicon carbide device can normally work under the electric field strength which is 10 times that of the silicon device. While the silicon carbide material used to fabricate silicon carbide devices is typically an epitaxial wafer of silicon carbide grown on a silicon carbide substrate. The silicon carbide epitaxial growth is commercialized at present, and is used in equipment for epitaxial growth of silicon carbide, a top cover of a reaction chamber is an important part in the equipment, plays a great role in the design of the epitaxial growth reaction chamber, can adjust the temperature field distribution inside the reaction chamber, improves the epitaxial growth conditions, and is an important component of the epitaxial growth reaction chamber. The top cover of the traditional epitaxial reaction chamber is planar and cannot play a supporting role.
Disclosure of Invention
In view of the above, the present invention is directed to a lid structure of a silicon carbide epitaxial growth reactor.
The technical scheme adopted for achieving the purpose is as follows:
the top cover structure of the silicon carbide epitaxial growth reaction chamber comprises a top cover body and an inner top cover, wherein the inner top cover comprises an outer ring and an inner ring, the outer ring is fixed on the upper surface of the top cover body, the inner ring is arranged above the top cover body in a suspending mode, and the outer ring and the inner ring are connected through a supporting portion.
Preferably, the inner ring is cylindrical, and the center of the cylindrical inner ring is a first through hole.
Preferably, the support portion includes a plurality of support rods, one end of each of the plurality of support rods is fixed to the outer side of the inner ring, and the other end of each of the plurality of support rods is fixed to the inner side of the outer ring.
Preferably, a second through hole is formed between the plurality of support rods.
Preferably, the support rods are provided with five support rods, and five second through holes are formed among the five support rods.
The top cover structure of the silicon carbide epitaxial growth reaction chamber provided by the invention has the beneficial effects that: the main improvement through designing the top cap structure, forms the bellied inner circle that makes progress on the top cap upper surface, like this for top cap inside has excellent resistance to compression and supporting capacity, has also obviously reduced the damaged phenomenon of top cap, has strengthened compressive resistance, and simultaneously, its structural design is ingenious reasonable, and easily shaping preparation is applicable to and uses widely.
Drawings
FIG. 1 is a perspective view of a top cover of a silicon carbide epitaxial growth reactor of the present invention;
fig. 2 is a cross-sectional view of fig. 1.
Detailed Description
The following further describes embodiments of the present invention with reference to the drawings. It should be noted that the description of the embodiments is provided to help understanding of the present invention, but the present invention is not limited thereto. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
As shown in fig. 1 and 2, the embodiment provides a top cover structure of a silicon carbide epitaxial growth reaction chamber, which includes a top cover body 1 and an inner top cover 2, wherein the inner top cover 2 includes an outer ring 21 and an inner ring 22, the outer ring 21 is fixed on the upper surface of the top cover body 1, the inner ring 22 is suspended above the top cover body 1, and the outer ring 21 and the inner ring 22 are connected through a support portion 23.
In this embodiment, the inner ring 22 has a cylindrical shape, and the center of the cylindrical inner ring 22 is the first through hole 221.
In this embodiment, the supporting portion 23 includes a plurality of supporting rods 231, and one end of each of the plurality of supporting rods 231 is fixed to the outer side of the inner ring 22, and the other end thereof is fixed to the inner side of the outer ring 21.
In this embodiment, a second through hole 232 is formed between the support rods 231.
In this embodiment, there are five support rods 231, and five second through holes 232 are formed between the five support rods 231.
The top cap structure of silicon carbide epitaxial growth reaction chamber of this embodiment is mainly through carrying out design improvement to the top cap structure, forms the bellied inner circle that makes progress on the top cap upper surface, like this for top cap inside has excellent resistance to compression and supporting capability, has also obviously reduced the damaged phenomenon of top cap, has strengthened compressive resistance, and simultaneously, its structural design is ingenious reasonable, and easily shaping preparation is applicable to using widely.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the described embodiments. It will be apparent to those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, and the scope of protection is still within the scope of the invention.
Claims (5)
1. The top cover structure of the silicon carbide epitaxial growth reaction chamber comprises a top cover body and an inner top cover, and is characterized in that the inner top cover comprises an outer ring and an inner ring, the outer ring is fixed on the upper surface of the top cover body, the inner ring is arranged in a suspending mode above the top cover body, and the outer ring and the inner ring are connected through a supporting portion.
2. The lid structure of a silicon carbide epitaxial growth reaction chamber as claimed in claim 1, wherein the inner ring has a cylindrical shape, and the center of the cylindrical inner ring is a first through hole.
3. The top cover structure of a silicon carbide epitaxial growth reaction chamber according to claim 1, wherein the support part comprises a plurality of support rods, one end of each support rod is fixed to the outer side of the inner ring, and the other end of each support rod is fixed to the inner side of the outer ring.
4. The lid structure of a silicon carbide epitaxial growth reaction chamber according to claim 3, wherein a second through-hole is formed between the plurality of support rods.
5. The lid structure of a silicon carbide epitaxial growth reaction chamber as claimed in claim 4, wherein the support rods are provided with five, and five second through holes are formed between five support rods.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911400025.XA CN111088522A (en) | 2019-12-30 | 2019-12-30 | Top cover structure of silicon carbide epitaxial growth reaction chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911400025.XA CN111088522A (en) | 2019-12-30 | 2019-12-30 | Top cover structure of silicon carbide epitaxial growth reaction chamber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111088522A true CN111088522A (en) | 2020-05-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911400025.XA Pending CN111088522A (en) | 2019-12-30 | 2019-12-30 | Top cover structure of silicon carbide epitaxial growth reaction chamber |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111088522A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6318618A (en) * | 1986-07-11 | 1988-01-26 | Toshiba Ceramics Co Ltd | Susceptor cover |
| CN203462174U (en) * | 2013-09-21 | 2014-03-05 | 瀚天天成电子科技（厦门）有限公司 | Top cover of reaction chamber for epitaxial growth of silicon carbide |
| CN203462492U (en) * | 2013-08-09 | 2014-03-05 | 凌其彬 | Compression resistance reinforced concrete inspection well cover |
| CN207392257U (en) * | 2017-10-25 | 2018-05-22 | 永昌县众强源塑胶制品有限公司 | Anti-pressure overhauls well lid |
-
2019
- 2019-12-30 CN CN201911400025.XA patent/CN111088522A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6318618A (en) * | 1986-07-11 | 1988-01-26 | Toshiba Ceramics Co Ltd | Susceptor cover |
| CN203462492U (en) * | 2013-08-09 | 2014-03-05 | 凌其彬 | Compression resistance reinforced concrete inspection well cover |
| CN203462174U (en) * | 2013-09-21 | 2014-03-05 | 瀚天天成电子科技（厦门）有限公司 | Top cover of reaction chamber for epitaxial growth of silicon carbide |
| CN207392257U (en) * | 2017-10-25 | 2018-05-22 | 永昌县众强源塑胶制品有限公司 | Anti-pressure overhauls well lid |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200501 |
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| RJ01 | Rejection of invention patent application after publication |