JPS58189533U - Susceptor for wafer - Google Patents

Susceptor for wafer

Info

Publication number
JPS58189533U
JPS58189533U JP8535082U JP8535082U JPS58189533U JP S58189533 U JPS58189533 U JP S58189533U JP 8535082 U JP8535082 U JP 8535082U JP 8535082 U JP8535082 U JP 8535082U JP S58189533 U JPS58189533 U JP S58189533U
Authority
JP
Japan
Prior art keywords
susceptor
wafer
view
abstract
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8535082U
Other languages
Japanese (ja)
Other versions
JPS6140768Y2 (en
Inventor
藤森　泰治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP8535082U priority Critical patent/JPS58189533U/en
Publication of JPS58189533U publication Critical patent/JPS58189533U/en
Application granted granted Critical
Publication of JPS6140768Y2 publication Critical patent/JPS6140768Y2/ja
Granted legal-status Critical Current

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  • Chemical Vapour Deposition (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

図面は本案の実施例を示し、第１図は斜面図、第２図は
断面図、第３図は多数を並列にして組立てた一部切欠斜
面図、第４図は第３図の断面図、第５図はプラズマ気相
反応装置の構成を示す概略説明図、第６図は変形例を示
す斜面図、第７図は第６図の断面図である。 １は反応室、２はサセプタ、３はウェーハ、４は係止部
、５は支持部材、６ｉ高周波電源である。The drawings show an embodiment of the present invention; Fig. 1 is a slope view, Fig. 2 is a cross-sectional view, Fig. 3 is a partly cut-away slope view of a large number assembled in parallel, and Fig. 4 is a cross-sectional view of Fig. 3. , FIG. 5 is a schematic explanatory diagram showing the configuration of the plasma vapor phase reactor, FIG. 6 is a perspective view showing a modification, and FIG. 7 is a sectional view of FIG. 6. 1 is a reaction chamber, 2 is a susceptor, 3 is a wafer, 4 is a locking part, 5 is a support member, and 6i is a high frequency power source.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 反応装置内でウェーハを支持するサセプタを金属含浸カ
ーボンで形成したウェーハ用サセプタ。A susceptor for wafers that supports wafers in a reaction device and is made of metal-impregnated carbon.
JP8535082U 1982-06-10 1982-06-10 Susceptor for wafer Granted JPS58189533U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8535082U JPS58189533U (en) 1982-06-10 1982-06-10 Susceptor for wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8535082U JPS58189533U (en) 1982-06-10 1982-06-10 Susceptor for wafer

Publications (2)

Publication Number Publication Date
JPS58189533U true JPS58189533U (en) 1983-12-16
JPS6140768Y2 JPS6140768Y2 (en) 1986-11-20

Family

ID=30094229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8535082U Granted JPS58189533U (en) 1982-06-10 1982-06-10 Susceptor for wafer

Country Status (1)

Country Link
JP (1) JPS58189533U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1032239A (en) * 1996-07-12 1998-02-03 Toto Ltd Electrostatic chuck stage and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1032239A (en) * 1996-07-12 1998-02-03 Toto Ltd Electrostatic chuck stage and manufacture thereof

Also Published As

Publication number Publication date
JPS6140768Y2 (en) 1986-11-20

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