JPS6057125U - Semiconductor vapor phase growth equipment - Google Patents

Semiconductor vapor phase growth equipment

Info

Publication number
JPS6057125U
JPS6057125U JP14881583U JP14881583U JPS6057125U JP S6057125 U JPS6057125 U JP S6057125U JP 14881583 U JP14881583 U JP 14881583U JP 14881583 U JP14881583 U JP 14881583U JP S6057125 U JPS6057125 U JP S6057125U
Authority
JP
Japan
Prior art keywords
vapor phase
phase growth
tube
semiconductor vapor
growth equipment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14881583U
Other languages
Japanese (ja)
Inventor
伊藤 弘巳
純次 米野
修 青木
Original Assignee
富士通株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士通株式会社 filed Critical 富士通株式会社
Priority to JP14881583U priority Critical patent/JPS6057125U/en
Publication of JPS6057125U publication Critical patent/JPS6057125U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図及び第2図は本考案−実施例のそれぞれ異なった
状態にあるものを表わす要部切断側面図である。 図に於いて、1は反応管、IAはガス置換用送気管、I
Bはガス置換用排気管、2は補助管、2Aはくびれ部分
、3は蓋体、3Aは排気管、4は′基板である。
FIGS. 1 and 2 are cross-sectional side views of essential parts showing different states of the present invention-embodiment, respectively. In the figure, 1 is a reaction tube, IA is a gas replacement air pipe, I
B is an exhaust pipe for gas replacement, 2 is an auxiliary pipe, 2A is a constriction, 3 is a lid, 3A is an exhaust pipe, and 4 is a substrate.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 排気管側に於ける側面に搬送ガスを置換する為の管が配
設された反応管と、前記搬送ガスを置換する為の管に対
向し得るくびれ部分が設けられ且つ前記反応管に挿脱さ
れる補助管とを備えてなることを特徴とする半導体気相
成長装置。
A reaction tube is provided with a tube for displacing the carrier gas on the side surface of the exhaust tube, and a constricted portion that can face the tube for displacing the carrier gas and is inserted into and removed from the reaction tube. A semiconductor vapor phase growth apparatus characterized by comprising: an auxiliary tube in which
JP14881583U 1983-09-28 1983-09-28 Semiconductor vapor phase growth equipment Pending JPS6057125U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14881583U JPS6057125U (en) 1983-09-28 1983-09-28 Semiconductor vapor phase growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14881583U JPS6057125U (en) 1983-09-28 1983-09-28 Semiconductor vapor phase growth equipment

Publications (1)

Publication Number Publication Date
JPS6057125U true JPS6057125U (en) 1985-04-20

Family

ID=30330519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14881583U Pending JPS6057125U (en) 1983-09-28 1983-09-28 Semiconductor vapor phase growth equipment

Country Status (1)

Country Link
JP (1) JPS6057125U (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4833150A (en) * 1971-08-28 1973-05-08
JPS52120682A (en) * 1976-04-02 1977-10-11 Fujitsu Ltd Gas phase growth method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4833150A (en) * 1971-08-28 1973-05-08
JPS52120682A (en) * 1976-04-02 1977-10-11 Fujitsu Ltd Gas phase growth method

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