JPS52120682A - Gas phase growth method - Google Patents

Gas phase growth method

Info

Publication number
JPS52120682A
JPS52120682A JP3614176A JP3614176A JPS52120682A JP S52120682 A JPS52120682 A JP S52120682A JP 3614176 A JP3614176 A JP 3614176A JP 3614176 A JP3614176 A JP 3614176A JP S52120682 A JPS52120682 A JP S52120682A
Authority
JP
Japan
Prior art keywords
gas phase
phase growth
growth method
unifrom
spacer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3614176A
Other languages
Japanese (ja)
Other versions
JPS5436063B2 (en
Inventor
Kazuo Maeda
Daijiro Kudo
Yoshiki Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3614176A priority Critical patent/JPS52120682A/en
Publication of JPS52120682A publication Critical patent/JPS52120682A/en
Publication of JPS5436063B2 publication Critical patent/JPS5436063B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: To make the unifrom thin film the gas phase growth, by using the spacer which is close to the interior wall of the reaction tube, and whose diameter of the middle part is smaller than that of both the end parts.
COPYRIGHT: (C)1977,JPO&Japio
JP3614176A 1976-04-02 1976-04-02 Gas phase growth method Granted JPS52120682A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3614176A JPS52120682A (en) 1976-04-02 1976-04-02 Gas phase growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3614176A JPS52120682A (en) 1976-04-02 1976-04-02 Gas phase growth method

Publications (2)

Publication Number Publication Date
JPS52120682A true JPS52120682A (en) 1977-10-11
JPS5436063B2 JPS5436063B2 (en) 1979-11-07

Family

ID=12461498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3614176A Granted JPS52120682A (en) 1976-04-02 1976-04-02 Gas phase growth method

Country Status (1)

Country Link
JP (1) JPS52120682A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057125U (en) * 1983-09-28 1985-04-20 富士通株式会社 Semiconductor vapor phase growth equipment
JPH01310054A (en) * 1988-06-04 1989-12-14 Ig Tech Res Inc Panel for construction

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057125U (en) * 1983-09-28 1985-04-20 富士通株式会社 Semiconductor vapor phase growth equipment
JPH01310054A (en) * 1988-06-04 1989-12-14 Ig Tech Res Inc Panel for construction

Also Published As

Publication number Publication date
JPS5436063B2 (en) 1979-11-07

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