JPH0350328U - - Google Patents
Info
- Publication number
- JPH0350328U JPH0350328U JP11152489U JP11152489U JPH0350328U JP H0350328 U JPH0350328 U JP H0350328U JP 11152489 U JP11152489 U JP 11152489U JP 11152489 U JP11152489 U JP 11152489U JP H0350328 U JPH0350328 U JP H0350328U
- Authority
- JP
- Japan
- Prior art keywords
- sample
- metal film
- ion
- diagram showing
- etching apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims description 3
- 238000000992 sputter etching Methods 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000010884 ion-beam technique Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Description
第１図は本考案に係るイオンエツチング装置の
要部実施例を示す図、第２図は本考案の応用例を
示す図、第３図は従来のカウフマン型のイオン源
を持つイオンエツチング装置を示す構成断面図、
第４図はコード板の構成を示す図、第５図は異常
放電により破壊された試料の拡大図である。
７……試料台、８……試料、２０……金属膜、
２１……ガラス基板、２２……電子線レジスト、
１６……試料押え。
Fig. 1 is a diagram showing an embodiment of the main part of an ion etching apparatus according to the present invention, Fig. 2 is a diagram showing an application example of the present invention, and Fig. 3 is a diagram showing an ion etching apparatus with a conventional Kauffman type ion source. A cross-sectional diagram showing the configuration,
FIG. 4 is a diagram showing the structure of the code plate, and FIG. 5 is an enlarged view of a sample destroyed by abnormal discharge. 7...Sample stand, 8...Sample, 20...Metal film,
21...Glass substrate, 22...Electron beam resist,
16...Sample holder.
Claims (1)
の金属膜２０の上に電子線レジスト２２が設けら
れた試料８を試料台７上に配置し、この試料台を
冷却しながら試料にイオンビームを衝突させてエ
ツチングを行なうイオンエツチング装置において
、 前記試料台７を熱伝導率の高いセラミツクスで
構成したことを特徴とするイオンエツチング装置
。[Claims for Utility Model Registration] A metal film 20 is provided on an insulating substrate 21, and a sample 8, in which an electron beam resist 22 is provided on the metal film 20, is placed on a sample stand 7. An ion etching apparatus that performs etching by bombarding a sample with an ion beam while cooling the sample, characterized in that the sample stage 7 is made of ceramics with high thermal conductivity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11152489U JPH0350328U (en) | 1989-09-22 | 1989-09-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11152489U JPH0350328U (en) | 1989-09-22 | 1989-09-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0350328U true JPH0350328U (en) | 1991-05-16 |
Family
ID=31659996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11152489U Pending JPH0350328U (en) | 1989-09-22 | 1989-09-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0350328U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002360321A (en) * | 2001-06-12 | 2002-12-17 | Etsuzo Fukuda | Support device for cane |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62272537A (en) * | 1986-05-21 | 1987-11-26 | Hitachi Ltd | Ion beam working method |
| JPS63155727A (en) * | 1986-12-19 | 1988-06-28 | Hitachi Ltd | Low temperature dry etching apparatus |
-
1989
- 1989-09-22 JP JP11152489U patent/JPH0350328U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62272537A (en) * | 1986-05-21 | 1987-11-26 | Hitachi Ltd | Ion beam working method |
| JPS63155727A (en) * | 1986-12-19 | 1988-06-28 | Hitachi Ltd | Low temperature dry etching apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002360321A (en) * | 2001-06-12 | 2002-12-17 | Etsuzo Fukuda | Support device for cane |
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