JPS63155727A - Low temperature dry etching apparatus - Google Patents
Low temperature dry etching apparatusInfo
- Publication number
- JPS63155727A JPS63155727A JP30124286A JP30124286A JPS63155727A JP S63155727 A JPS63155727 A JP S63155727A JP 30124286 A JP30124286 A JP 30124286A JP 30124286 A JP30124286 A JP 30124286A JP S63155727 A JPS63155727 A JP S63155727A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- sample
- low
- dry etching
- etching apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 title claims description 15
- 238000001816 cooling Methods 0.000 claims abstract description 11
- 230000007246 mechanism Effects 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000010980 sapphire Substances 0.000 claims description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 7
- 238000004381 surface treatment Methods 0.000 claims description 5
- 238000012805 post-processing Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 3
- 230000032258 transport Effects 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000011224 oxide ceramic Substances 0.000 claims description 2
- 229910052574 oxide ceramic Inorganic materials 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 26
- 230000000087 stabilizing effect Effects 0.000 abstract description 2
- 230000001276 controlling effect Effects 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 239000004809 Teflon Substances 0.000 description 6
- 229920006362 Teflon® Polymers 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 210000000078 claw Anatomy 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- -1 Avacina and spinel Chemical compound 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000001073 sample cooling Methods 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、プラズマを用いた表面処理装置に係り、とく
に、エツチング特性の制御に好適な試料温度の制御装置
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a surface treatment apparatus using plasma, and particularly to a sample temperature control apparatus suitable for controlling etching characteristics.
ドライエツチングにおいて、従来、水冷した試料台上に
ウェハーを載置し、エツチングを行なう方法が用いられ
、試料台の材料はステンレス鋼またはステンレス鋼上に
石英板またはテフロン板を載置し、その上に試料を置く
方法が使われていた。Conventionally, in dry etching, a method is used in which the wafer is placed on a water-cooled sample stand and etched, and the sample stand is made of stainless steel or a quartz or Teflon plate placed on stainless steel. The method used was to place the sample on the
いずれの場合も、レジストが変質する温度（１２０℃〜
１５０℃）以下に試料または試料台を冷却することが目
的であり、一部ガス冷却が行なわれていた。In either case, the temperature at which the resist deteriorates (120℃~
The purpose was to cool the sample or sample stage to below 150°C, and some gas cooling was used.
また、試料を低温に保ち、０℃以下の温度でエツチング
をするという低温ドライエツチングでは、試料を冷却す
る試料台については述べられていなかった。Further, in low-temperature dry etching, in which the sample is kept at a low temperature and etched at a temperature of 0° C. or lower, there is no mention of a sample stage for cooling the sample.
しかし、上記従来装置および技術では、試料の温度をモ
ニタする点について配慮されておらず、エツチング特性
が、試料温度の時間変化により変わってしまうという欠
点があった。However, the above-mentioned conventional apparatuses and techniques do not take into consideration the point of monitoring the temperature of the sample, and have the disadvantage that the etching characteristics change with time changes in the sample temperature.
また、上記従来技術で、ステンレス鋼上に直接試料を載
置する技術は、エツチング時にステンレス板の表面がエ
ツチングされ、試料上に汚染物となって堆積するという
問題点があり、歩留り向上のため、試料をステンレス鋼
の試料台上に直接載置せず、石英板やテフロン板を介し
て試料を冷却する方法がとられていた。しかし、低温に
試料を冷却するには、これらの絶縁物は熱伝導性が極め
て悪く、試料台の金属が低温であっても、試料が冷却で
きないという欠点があった。In addition, in the above-mentioned conventional technology, the technique of placing a sample directly on stainless steel has the problem that the surface of the stainless steel plate is etched during etching, and contaminants are deposited on the sample. Previously, the sample was not placed directly on a stainless steel sample stage, but instead was cooled using a quartz plate or a Teflon plate. However, in order to cool the sample to a low temperature, these insulators have extremely poor thermal conductivity, so even if the metal of the sample stage is at a low temperature, the sample cannot be cooled down.
本発明の目的は、低温エツチングでの試料の温度をモニ
ターする機構を具備したエツチング制御装置を提供する
ことにある。An object of the present invention is to provide an etching control device equipped with a mechanism for monitoring the temperature of a sample during low-temperature etching.
また、上記従来技術においては、搬送機構の材料につい
て配慮されておらず、冷却された試料を搬送するときに
、試料がウェハー、内の熱ひずみにより破壊するなどの
問題があった。Further, in the above-mentioned conventional technology, no consideration was given to the material of the transport mechanism, and there was a problem that when transporting a cooled sample, the sample could be destroyed due to thermal strain within the wafer.
本発明の他の目的は、汚染をさけるため、直接金属支持
台上に試料を載置せず、試料を効率良く冷却する方法を
提供することにある。Another object of the present invention is to provide a method for efficiently cooling a sample without placing the sample directly on a metal support in order to avoid contamination.
上記目的は、試料表面の温度を熱電対もしくは赤外線発
光を用いた温度モニタにより検出し、エツチング時に、
その温度を制御することにより、達成される。The above purpose is to detect the temperature of the sample surface with a temperature monitor using a thermocouple or infrared light emission, and to detect the temperature during etching.
This is achieved by controlling its temperature.
上記本発明の他の目的は、試料と金属で作られた試料台
の間に、電気的には絶縁体であり、かつ。Another object of the present invention is to provide an electrical insulator between the sample and the sample stage made of metal.
低温での熱伝導率が高い材料を挿入することにより達成
される。This is achieved by inserting a material with high thermal conductivity at low temperatures.
上記問題は、冷却された試料を後処理室へ搬送する機構
で、試料と接触する部分を難熱伝導性物質で構成するこ
とにより、解決される。The above problem can be solved by configuring the part of the mechanism that transports the cooled sample to the post-processing chamber that comes into contact with the sample with a poorly heat conductive material.
低温エツチングにおいては、試料温度が高くなると、サ
イドエッチが起こりやすく、また低温になるとサイドエ
ツチングは小さい傾向がある。また試料が低温になりす
ぎるとエツチングが進まなくなる。したがって試料温度
を所定の温度に設定することは、所望のエツチングを行
なうために不可欠である。試料温度をモニターすると、
エツチング中、および前後の温度の測定が変化が可能と
なる。それにより、試料の温度制御をヒータと冷却機構
の制御により行なえるので、温度変化によるエツチング
特性の変化が防止できる。In low-temperature etching, side etching tends to occur as the sample temperature increases, and side etching tends to decrease as the temperature decreases. Furthermore, if the sample temperature becomes too low, etching will not proceed. Therefore, setting the sample temperature to a predetermined temperature is essential for performing the desired etching. By monitoring the sample temperature,
Temperature measurements before and after etching can be varied. Thereby, the temperature of the sample can be controlled by controlling the heater and the cooling mechanism, so that changes in etching characteristics due to temperature changes can be prevented.
また、試料と試料台の間に載置した材料により、試料台
を構成する金属は、直接プラズマにさらされない。それ
により、試料を低温に保持した状態でもその試料台の金
属がプラズマによりエラチングされ、その一部が試料上
に堆積することがなくなる。Furthermore, due to the material placed between the sample and the sample stage, the metal constituting the sample stage is not directly exposed to plasma. As a result, even when the sample is kept at a low temperature, the metal on the sample stage is etched by the plasma, and a part of it does not accumulate on the sample.
さらに、冷却された試料と試料搬送機構の良熱伝導性材
料が難熱伝導性材料を介して接触する。Furthermore, the cooled sample and the good heat conductive material of the sample transport mechanism come into contact via the poorly heat conductive material.
それにより、冷却された試料から接触部分への熱のにげ
が極めて小さくなり、局部的に温度差を生じることがな
い。As a result, the amount of heat transferred from the cooled sample to the contact portion becomes extremely small, and no local temperature difference occurs.
〈実施例１〉
以下１本発明の一実施例を第１図により説明する。本実
施例は、試料台について表わしたものであり、試料１は
おさえリング２により支持板３に接触し、全体が温度調
節機構４にとりつけられている。熱電対５は、支持板を
通し試料１の裏面に接触し、熱電対からの出力は、温度
調節装置６に転送され、試料温度を制御している。試料
台全体には、高周波電力が印加されるので、熱電対およ
び温度調節装置は電気的にアースより浮いた形となって
いる。プラズマは試料１の表面に接する。<Example 1> An example of the present invention will be described below with reference to FIG. In this embodiment, a sample stage is shown, in which a sample 1 is brought into contact with a support plate 3 through a holding ring 2, and the entire sample is attached to a temperature control mechanism 4. The thermocouple 5 contacts the back surface of the sample 1 through the support plate, and the output from the thermocouple is transferred to the temperature control device 6 to control the sample temperature. Since high-frequency power is applied to the entire sample stage, the thermocouple and temperature control device are electrically suspended from ground. The plasma contacts the surface of sample 1.
本実施例では、試料温度が、水冷温度未満に制御でき、
また温度をモニタすることで、プラズマによる表面処理
時において設定温度と誤差±２０℃で制御可能であり、
低温エツチングの温度制御に極めて有効であった。In this example, the sample temperature can be controlled below the water cooling temperature,
In addition, by monitoring the temperature, it is possible to control the set temperature with an error of ±20°C during surface treatment with plasma.
This was extremely effective in controlling the temperature of low-temperature etching.
〈実施例２〉
第２図により本実施例を説明する。本実施例では、試料
裏面からでる赤外線をモニターする温度測定装置６を用
いた。ファイバー５により温度測定を行ない、その出力
を温度制御装置７に転送することにより、試料１を設定
温度±２０℃で試料温度制御することが可能であり、低
湿エツチングの試料温度制御に極めて有効であった。さ
らに、ファイバーを用いて温度測定するので電気的な絶
縁が維持でき、熱電対を使うより、よりたやすく温度検
出と高周波電力印加が可能であった。<Example 2> This example will be explained with reference to FIG. In this example, a temperature measuring device 6 was used that monitors infrared rays emitted from the back surface of the sample. By measuring the temperature with the fiber 5 and transmitting the output to the temperature control device 7, it is possible to control the sample 1 temperature within the set temperature ±20°C, which is extremely effective for controlling the sample temperature in low-humidity etching. there were. Furthermore, since temperature is measured using a fiber, electrical insulation can be maintained, making it easier to detect temperature and apply high-frequency power than using a thermocouple.
上記実施例１，２は、高周波放電（周波数１．３．５６
Ｍ Ｈｚ以下）を用いたエツチング装置、マイクロ波エ
ツチング装置に適用できる。In the above Examples 1 and 2, high frequency discharge (frequency 1.3.56
It can be applied to etching equipment using MHz (MHz or less) and microwave etching equipment.
〈実施例３〉
以下本発明の他の実施例を第３図により説明する。第３
図は、プラズマ処理装置でプラズマに接するように配置
される試料台と試料支持機構についてあられしたもので
ある。試料１１の下にサファイア板１２（厚さ２ｍｍ）
を載置し、そのサファイア板をステンレス鋼で構成した
試料台１３上に置いた。サファイアは、熱伝導率が４０
Ｋにおいて、５９０’ＯＷ／ｍ−にであり、厚さ２■で
も所定の温度−１５０℃まで約３０秒で冷却できた。<Example 3> Another example of the present invention will be described below with reference to FIG. Third
The figure shows a sample stage and a sample support mechanism that are placed in contact with plasma in a plasma processing apparatus. Sapphire plate 12 (thickness 2mm) under sample 11
was placed, and the sapphire plate was placed on a sample stage 13 made of stainless steel. Sapphire has a thermal conductivity of 40
K, it was 590'OW/m-, and even with a thickness of 2cm, it could be cooled to the predetermined temperature of -150°C in about 30 seconds.
石英板やテフロンを使用した場合より、約１／１０以下
の時間で試料を冷却することができた。The sample could be cooled in about 1/10 the time or less than when using a quartz plate or Teflon.
〈実施例４〉 第４図により本発明の他の実施例を説明する。<Example 4> Another embodiment of the present invention will be explained with reference to FIG.
本実施例は、上記実施例１１のようにサファイア板１５
を介して試料４を載置したものであるが、それに加えて
、冷却効率向上させるため、試料おさえ治具１７を使用
した例である。実施例３より約２０％の冷却効率向上が
あった。試料おさえ治具］７は、サファイアで構成する
場合、ＳｉＣ等の半導体で構成する場合の両方で同等の
効果があった。In this embodiment, the sapphire plate 15 is
In this example, the sample 4 is placed through the sample 4, and in addition, a sample holding jig 17 is used to improve the cooling efficiency. There was an improvement in cooling efficiency of about 20% compared to Example 3. Sample holding jig] 7 had the same effect both when it was made of sapphire and when it was made of a semiconductor such as SiC.
〈実施例５〉
上記実施例では、低温ドライエツチング装置内において
、ウェハを搬送する方式が適用できた。<Example 5> In the above example, a method of transporting the wafer within a low temperature dry etching apparatus could be applied.
これに対し、ウェハーをサファイア板上に載置し、その
ウェハーをおさえ治具でサンドイッチ型におさえた形の
治具を用い、そのサファイア治具を搬送する方式も、低
温エツチングに有効であった。On the other hand, a method of placing the wafer on a sapphire plate, using a sandwich-shaped jig to hold the wafer in place, and transporting the sapphire jig was also effective for low-temperature etching. .
実施例３，４．５で、サファイア板を用いた場合を金属
汚染度を調べた結果、サファイア板を使用しない場合に
くらべ、表面残留金属量が約］１５に低減できた。In Examples 3 and 4.5, when the sapphire plate was used, the degree of metal contamination was investigated. As a result, the amount of residual metal on the surface was reduced to about 15% compared to the case where the sapphire plate was not used.
また、試料台上に置く材料としては、サファイアのほか
ダイアモンドを混入した板やダイヤモンド状薄膜、等の
材料や半絶縁性材料のＳｉＣ等も有効であった。In addition to sapphire, materials such as a plate containing diamond, a diamond-like thin film, and the semi-insulating material SiC were also effective as materials placed on the sample stage.
本発明により、そのウェハーとの接触部を上記難熱伝導
性物質で構成することによって、不良発生率は、金属を
使った場合の１／３以下となった。According to the present invention, by forming the contact portion with the wafer using the above-mentioned heat-resistant conductive material, the failure rate is reduced to one-third or less of that when metal is used.
〈実施例６〉
第５図に示すように本実施例は、冷却された試科白２７
から一ヒ下運動可能な試料押し上げ機構２６によって上
方に押し上げられた試料２４を、回転アーム形搬送機構
２３により後処理室へ搬送する装置を示したものである
。本実施例では、ウェハ２１に接する支持円板２５とツ
メ２４をテフロンにより構成した。テフロンで構成する
ことにより、金属で構成した場合の操作による不良発生
は］／３以下となった。テフロンに試料が接触する構造
が低温ドライエツチングに極めて有効である。支持円板
とツメの材料は、石英ガラス、アバシナ、スピネルなど
の酸化物セラミクス、ＢＮ。<Example 6> As shown in FIG.
This figure shows an apparatus in which a sample 24 pushed upward by a sample push-up mechanism 26 capable of downward movement is transferred to a post-processing chamber by a rotary arm-type transfer mechanism 23. In this embodiment, the support disk 25 and the claws 24 in contact with the wafer 21 are made of Teflon. By using Teflon, the number of defects caused by operation when using metal was reduced to less than /3. The structure in which the sample contacts Teflon is extremely effective for low-temperature dry etching. The materials of the support disk and claws are quartz glass, oxide ceramics such as Avacina and spinel, and BN.
マイカ、ステアタイト等の無機セラミクス、シリコンゴ
ム、エポキシ樹脂、フェノール樹脂、ポリスチレンパラ
フィン等の有機絶縁物で構成しても効果がある。It is also effective to use inorganic ceramics such as mica and steatite, and organic insulators such as silicone rubber, epoxy resin, phenol resin, and polystyrene paraffin.
また搬送機構については、上記実施例のほか、フォーク
型、ツメつかみ型、吸着形がある。In addition to the above-mentioned embodiments, the conveyance mechanism includes a fork type, a claw type, and a suction type.
本発明によれば、低温エツチングの温度モニタを行い温
度制御ができるので、エツチングの再現性や特性安定化
に効果がある。According to the present invention, since the temperature of low-temperature etching can be monitored and controlled, it is effective in improving the reproducibility of etching and stabilizing the characteristics.
また、低温エツチングを行なうに際し、試料冷却効率を
悪くしないでプラズマに直接試料台が接しないので、試
料台を構成する金属による汚染を防ぐことができるので
低汚染の低温エツチングに効果がある。Furthermore, when performing low-temperature etching, the sample stage does not come into direct contact with the plasma without impairing sample cooling efficiency, so contamination by metals constituting the sample stage can be prevented, which is effective in low-contamination low-temperature etching.
さらに、冷却した試料を、試料処理室から後処理室へ、
熱によるひずみを極めて小さくした状態で搬送できるの
で、ひずみによる破壊を防ぐ効果がある。Furthermore, the cooled sample is transferred from the sample processing chamber to the post-processing chamber.
Since it can be transported with very little distortion due to heat, it is effective in preventing destruction due to distortion.
第１図乃至第５図は、それぞれ本発明の詳細な説明する
ための図である。1 to 5 are diagrams for explaining the present invention in detail, respectively.
Claims (1)
満に制御して、該真空容器内に発生させたプラズマを用
いて、該試料台上に載置し、プラズマと接する試料の表
面処理を行なうドライエッチング装置において、該試料
の温度を検出する機構を有することを特徴とする低温ド
ライエッチング装置。 ２、該試料の裏面の温度を検出することを特徴とする特
許請求の範囲第１項記載の低温ドライエッチング装置。 ３、温度検出が熱電対もしくは赤外線発光を検出する温
度モニタにより行なわれることを特徴とする特許請求の
範囲第１項乃至第２項記載の低温ドライエッチング装置
。 ４、非接触で温度をモニタし、試料温度を制御すること
を特徴とする特許請求の範囲第１項乃至第３項記載の低
温ドライエッチング装置。 ５、真空容器内に設けられた試料台の温度を制御し、該
真空容器内に発生したプラズマにより、該試料台上に載
置した試料の表面処理を行う装置において、該試料と試
料台の間にサファイア板を設置することを特徴とする低
温ドライエッチング装置。 ６、上記１記載の処理装置において、試料温度が、水冷
温度以下に保持されることを特徴とする特許請求の範囲
第５項記載の低温ドライエッチング装置。 ７、試料温度が０℃以下に保たれていることを特徴とす
る特許請求の範囲第５項乃至第６項記載の低温ドライエ
ッチング装置。 ８、真空容器内に設けられた試料台の温度を水冷温度未
満に制御して、該真空容器内にプラズマを発生させて該
試料台上に載置した試料の表面処理を行い、処理後に後
処理室に試料を搬送する低温ドライエツチング装置にお
いて、冷却された試料を後処理室に搬送する手段を有し
、搬送時において試料と接触する部分の少なくとも一部
が熱伝導率が低い物質で構成されることを特徴とする低
温ドライエッチング装置。 ９、搬送時においと試料と接触する一部が、高融点酸化
物系セラミクス、無機セラミクス、有機絶縁性物質、半
導体で構成されていることを特徴とする特許請求の範囲
第８項記載の低温ドライエッチング装置。[Claims] 1. Controlling the temperature of a sample stage provided in a vacuum container below the water cooling temperature, and placing the specimen on the sample stage using plasma generated in the vacuum container; A low-temperature dry etching apparatus for performing surface treatment on a sample in contact with plasma, characterized by having a mechanism for detecting the temperature of the sample. 2. The low-temperature dry etching apparatus according to claim 1, wherein the temperature of the back surface of the sample is detected. 3. The low-temperature dry etching apparatus according to claims 1 and 2, wherein temperature detection is performed by a thermocouple or a temperature monitor that detects infrared light emission. 4. The low-temperature dry etching apparatus according to claims 1 to 3, characterized in that the temperature is monitored in a non-contact manner and the sample temperature is controlled. 5. In an apparatus that controls the temperature of a sample stage installed in a vacuum container and performs surface treatment of a sample placed on the sample stage using plasma generated in the vacuum container, the temperature between the sample and the sample stage is controlled. A low-temperature dry etching device characterized by installing a sapphire plate in between. 6. The low-temperature dry etching apparatus according to claim 5, wherein the sample temperature is maintained at a water-cooling temperature or lower. 7. The low-temperature dry etching apparatus according to claims 5 to 6, wherein the sample temperature is maintained at 0° C. or lower. 8. Control the temperature of the sample stage installed in the vacuum container to below the water cooling temperature, generate plasma in the vacuum container to perform surface treatment on the sample placed on the sample stage, and perform post-treatment after treatment. A low-temperature dry etching device that transports a sample to a processing chamber, which has means for transporting the cooled sample to a post-processing chamber, and at least part of the part that comes into contact with the sample during transport is made of a material with low thermal conductivity. A low-temperature dry etching device characterized by: 9. A low-temperature device according to claim 8, wherein a portion of the odor that comes into contact with the sample during transportation is composed of high-melting point oxide ceramics, inorganic ceramics, organic insulating substances, and semiconductors. Dry etching equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30124286A JPS63155727A (en) | 1986-12-19 | 1986-12-19 | Low temperature dry etching apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30124286A JPS63155727A (en) | 1986-12-19 | 1986-12-19 | Low temperature dry etching apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63155727A true JPS63155727A (en) | 1988-06-28 |
Family
ID=17894486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30124286A Pending JPS63155727A (en) | 1986-12-19 | 1986-12-19 | Low temperature dry etching apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63155727A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0242721A (en) * | 1988-08-02 | 1990-02-13 | Nec Corp | Dry etching apparatus |
| JPH0350328U (en) * | 1989-09-22 | 1991-05-16 | ||
| DE4123711A1 (en) * | 1990-07-18 | 1992-01-23 | Micron Technology Inc | METHOD FOR DRYING SEMICONDUCTOR SUBSTRATE DISC |
| JPH0528032U (en) * | 1991-09-18 | 1993-04-09 | 富士通株式会社 | Plasma processing device |
| US5352327A (en) * | 1992-07-10 | 1994-10-04 | Harris Corporation | Reduced temperature suppression of volatilization of photoexcited halogen reaction products from surface of silicon wafer |
| CN110132436A (en) * | 2019-05-24 | 2019-08-16 | 费勉仪器科技（上海）有限公司 | The temperature measuring equipment of sample temperature is accurately measured under a kind of UHV condition |
-
1986
- 1986-12-19 JP JP30124286A patent/JPS63155727A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0242721A (en) * | 1988-08-02 | 1990-02-13 | Nec Corp | Dry etching apparatus |
| JPH0350328U (en) * | 1989-09-22 | 1991-05-16 | ||
| DE4123711A1 (en) * | 1990-07-18 | 1992-01-23 | Micron Technology Inc | METHOD FOR DRYING SEMICONDUCTOR SUBSTRATE DISC |
| JPH0528032U (en) * | 1991-09-18 | 1993-04-09 | 富士通株式会社 | Plasma processing device |
| US5352327A (en) * | 1992-07-10 | 1994-10-04 | Harris Corporation | Reduced temperature suppression of volatilization of photoexcited halogen reaction products from surface of silicon wafer |
| CN110132436A (en) * | 2019-05-24 | 2019-08-16 | 费勉仪器科技（上海）有限公司 | The temperature measuring equipment of sample temperature is accurately measured under a kind of UHV condition |
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