JPH0348853U - - Google Patents
Info
- Publication number
- JPH0348853U JPH0348853U JP10975289U JP10975289U JPH0348853U JP H0348853 U JPH0348853 U JP H0348853U JP 10975289 U JP10975289 U JP 10975289U JP 10975289 U JP10975289 U JP 10975289U JP H0348853 U JPH0348853 U JP H0348853U
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- coolant
- chamber
- coolant chamber
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003507 refrigerant Substances 0.000 claims description 3
- 239000002826 coolant Substances 0.000 claims 3
- 238000001816 cooling Methods 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- 238000010884 ion-beam technique Methods 0.000 description 1
Description
第１図はこの考案の実施例を示す断面図、第２
図はこの考案の他の実施例を示す断面図、第３図
は従来例の断面図である。
１……冷媒室、３……ウエハー、５……イオン
ビーム、６……冷媒、８……真空排気装置（真空
ポンプ）。
Figure 1 is a sectional view showing an embodiment of this invention, Figure 2 is a sectional view showing an embodiment of this invention.
The figure is a sectional view showing another embodiment of this invention, and FIG. 3 is a sectional view of a conventional example. 1...Refrigerant chamber, 3...Wafer, 5...Ion beam, 6...Refrigerant, 8...Evacuation device (vacuum pump).
Claims (1)
からイオンが注入されるウエハーを気密に設置す
るとともに、前記冷媒室の内部に前記ウエハーの
裏面に接するように冷媒を配置してなり、前記冷
媒室の真空度を、ウエハーの目標冷却温度に応じ
て調整自在としてなるウエハー冷却装置。 A wafer into which ions are implanted from an ion source is airtightly installed in a wafer holder having an opening window in a coolant chamber, and a coolant is arranged inside the coolant chamber so as to be in contact with the back surface of the wafer, A wafer cooling device that allows the degree of vacuum in the refrigerant chamber to be adjusted according to the target cooling temperature of the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10975289U JPH0348853U (en) | 1989-09-20 | 1989-09-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10975289U JPH0348853U (en) | 1989-09-20 | 1989-09-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0348853U true JPH0348853U (en) | 1991-05-10 |
Family
ID=31658321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10975289U Pending JPH0348853U (en) | 1989-09-20 | 1989-09-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0348853U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010153734A (en) * | 2008-12-26 | 2010-07-08 | Tokyo Electron Ltd | Annealing device and annealing method |
| JP2012044041A (en) * | 2010-08-20 | 2012-03-01 | Tokyo Electron Ltd | Substrate processing device and temperature control method |
| WO2012124246A1 (en) * | 2011-03-11 | 2012-09-20 | パナソニック株式会社 | Thin-film production method and production device |
-
1989
- 1989-09-20 JP JP10975289U patent/JPH0348853U/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010153734A (en) * | 2008-12-26 | 2010-07-08 | Tokyo Electron Ltd | Annealing device and annealing method |
| JP2012044041A (en) * | 2010-08-20 | 2012-03-01 | Tokyo Electron Ltd | Substrate processing device and temperature control method |
| WO2012124246A1 (en) * | 2011-03-11 | 2012-09-20 | パナソニック株式会社 | Thin-film production method and production device |
| JP5058396B1 (en) * | 2011-03-11 | 2012-10-24 | パナソニック株式会社 | Thin film manufacturing method and manufacturing apparatus |
| CN103392025A (en) * | 2011-03-11 | 2013-11-13 | 松下电器产业株式会社 | Thin-film production method and production device |
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