JPH01120328U - - Google Patents
Info
- Publication number
- JPH01120328U JPH01120328U JP1532488U JP1532488U JPH01120328U JP H01120328 U JPH01120328 U JP H01120328U JP 1532488 U JP1532488 U JP 1532488U JP 1532488 U JP1532488 U JP 1532488U JP H01120328 U JPH01120328 U JP H01120328U
- Authority
- JP
- Japan
- Prior art keywords
- processing space
- processing
- thermal spray
- samples
- faces
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005507 spraying Methods 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 claims 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Description
第１図は本考案に係る処理装置の断面図、第２
図は溶射被膜の形成工程を示す図である。
尚、図面中、３はチヤンバー、４はホルダー、
５は上部電極、９は溶射被膜、１０は溶射ガン、
Ｗは試料である。
Figure 1 is a sectional view of the processing device according to the present invention, Figure 2
The figure shows the process of forming a thermally sprayed coating. In addition, in the drawing, 3 is a chamber, 4 is a holder,
5 is an upper electrode, 9 is a thermal spray coating, 10 is a thermal spray gun,
W is a sample.
Claims (1)
リアクテイブイオンエツチング処理等を施す装置
において、この装置の処理空間を形成するか処理
空間に臨む部材の表面にはセラミツク材料からな
る溶射皮膜が形成されていることを特徴とする試
料処理装置。 In an apparatus that performs plasma processing or reactive ion etching on samples such as semiconductor wafers, a thermal spray coating made of a ceramic material is formed on the surface of a member that forms the processing space of the apparatus or faces the processing space. A sample processing device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1532488U JPH01120328U (en) | 1988-02-08 | 1988-02-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1532488U JPH01120328U (en) | 1988-02-08 | 1988-02-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01120328U true JPH01120328U (en) | 1989-08-15 |
Family
ID=31227276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1532488U Pending JPH01120328U (en) | 1988-02-08 | 1988-02-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01120328U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04363021A (en) * | 1991-02-08 | 1992-12-15 | Sumitomo Metal Ind Ltd | Plasma process device |
| JP2007332462A (en) * | 2000-12-12 | 2007-12-27 | Tokyo Electron Ltd | Method for regenerating plasma treatment container, member inside the plasma treatment container, method for manufacturing the member inside the plasma treatment container and apparatus for plasma treatment |
| US8877002B2 (en) | 2002-11-28 | 2014-11-04 | Tokyo Electron Limited | Internal member of a plasma processing vessel |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63281430A (en) * | 1987-05-14 | 1988-11-17 | Matsushita Electric Ind Co Ltd | Electrode structure of dry etching device |
| JPS6439728A (en) * | 1987-08-05 | 1989-02-10 | Mitsubishi Electric Corp | Manufacture of semiconductor by plasma reaction |
-
1988
- 1988-02-08 JP JP1532488U patent/JPH01120328U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63281430A (en) * | 1987-05-14 | 1988-11-17 | Matsushita Electric Ind Co Ltd | Electrode structure of dry etching device |
| JPS6439728A (en) * | 1987-08-05 | 1989-02-10 | Mitsubishi Electric Corp | Manufacture of semiconductor by plasma reaction |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04363021A (en) * | 1991-02-08 | 1992-12-15 | Sumitomo Metal Ind Ltd | Plasma process device |
| JP2007332462A (en) * | 2000-12-12 | 2007-12-27 | Tokyo Electron Ltd | Method for regenerating plasma treatment container, member inside the plasma treatment container, method for manufacturing the member inside the plasma treatment container and apparatus for plasma treatment |
| US8877002B2 (en) | 2002-11-28 | 2014-11-04 | Tokyo Electron Limited | Internal member of a plasma processing vessel |
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