JPS60132470U - Molecular beam crystal growth equipment - Google Patents
Molecular beam crystal growth equipmentInfo
- Publication number
- JPS60132470U JPS60132470U JP1995484U JP1995484U JPS60132470U JP S60132470 U JPS60132470 U JP S60132470U JP 1995484 U JP1995484 U JP 1995484U JP 1995484 U JP1995484 U JP 1995484U JP S60132470 U JPS60132470 U JP S60132470U
- Authority
- JP
- Japan
- Prior art keywords
- molecular beam
- single crystal
- crystal substrate
- constituent elements
- beam source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は分子線結晶成長装置の構成を説明する斜視図ま
たは第2図は本考案を実施した装置の平面図である。
図において2.5,6.7は分子線源セル、4はGaA
s基板、8は坩堝。FIG. 1 is a perspective view illustrating the structure of a molecular beam crystal growth apparatus, and FIG. 2 is a plan view of the apparatus embodying the present invention. In the figure, 2.5 and 6.7 are molecular beam source cells, and 4 is GaA
s substrate, 8 is a crucible.
Claims (1)
複数個゛の分子線源セルを設け、これを加熱して該分子
線源セルに個別に充填されている化合物半導体の構成元
素を前記単結晶基板上に照射せしめ、該構成元素を単結
晶基板上に結合させて化合物半導体のエピタキシャル成
長を行う成長装置において、前記構成元素のうち蒸気圧
が高く被処理単結晶基板上では他の構成元素の飛来によ
ってのみ付着が可能な元素の分子線源セルを他の分子線
源セルよりも大口径に作ると共に前記単結晶基板の正面
に近接して設けることを特徴とする分子線結晶成長装置
。A structure of a compound semiconductor in which a plurality of molecular beam source cells are provided on a single crystal substrate heated in an ultra-high vacuum, facing each other, and the cells are individually filled by heating the single crystal substrate. In a growth apparatus that performs epitaxial growth of a compound semiconductor by irradiating elements onto the single crystal substrate and bonding the constituent elements onto the single crystal substrate, some of the constituent elements having a high vapor pressure and others on the single crystal substrate to be processed are used. A molecular beam crystal, characterized in that a molecular beam source cell for an element that can be attached only by the flying of constituent elements is made to have a larger diameter than other molecular beam source cells, and is provided close to the front of the single crystal substrate. growth equipment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1995484U JPS60132470U (en) | 1984-02-15 | 1984-02-15 | Molecular beam crystal growth equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1995484U JPS60132470U (en) | 1984-02-15 | 1984-02-15 | Molecular beam crystal growth equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60132470U true JPS60132470U (en) | 1985-09-04 |
JPS6348703Y2 JPS6348703Y2 (en) | 1988-12-14 |
Family
ID=30510001
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1995484U Granted JPS60132470U (en) | 1984-02-15 | 1984-02-15 | Molecular beam crystal growth equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60132470U (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5640658U (en) * | 1979-09-05 | 1981-04-15 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5425219A (en) * | 1977-07-28 | 1979-02-26 | Asahi Organic Chem Ind | Method of making casting sand |
-
1984
- 1984-02-15 JP JP1995484U patent/JPS60132470U/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5640658U (en) * | 1979-09-05 | 1981-04-15 |
Also Published As
Publication number | Publication date |
---|---|
JPS6348703Y2 (en) | 1988-12-14 |
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