JPS60132470U - Molecular beam crystal growth equipment - Google Patents

Molecular beam crystal growth equipment

Info

Publication number
JPS60132470U
JPS60132470U JP1995484U JP1995484U JPS60132470U JP S60132470 U JPS60132470 U JP S60132470U JP 1995484 U JP1995484 U JP 1995484U JP 1995484 U JP1995484 U JP 1995484U JP S60132470 U JPS60132470 U JP S60132470U
Authority
JP
Japan
Prior art keywords
molecular beam
single crystal
crystal substrate
constituent elements
beam source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1995484U
Other languages
Japanese (ja)
Other versions
JPS6348703Y2 (en
Inventor
淳二 斉藤
冷水　佐寿
Original Assignee
富士通株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士通株式会社 filed Critical 富士通株式会社
Priority to JP1995484U priority Critical patent/JPS60132470U/en
Publication of JPS60132470U publication Critical patent/JPS60132470U/en
Application granted granted Critical
Publication of JPS6348703Y2 publication Critical patent/JPS6348703Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は分子線結晶成長装置の構成を説明する斜視図ま
たは第２図は本考案を実施した装置の平面図である。 図において２．５，６．７は分子線源セル、４はＧａＡ
ｓ基板、８は坩堝。FIG. 1 is a perspective view illustrating the structure of a molecular beam crystal growth apparatus, and FIG. 2 is a plan view of the apparatus embodying the present invention. In the figure, 2.5 and 6.7 are molecular beam source cells, and 4 is GaA
s substrate, 8 is a crucible.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 超高真空中で加熱された単結晶基板上にこれと対向して
複数個゛の分子線源セルを設け、これを加熱して該分子
線源セルに個別に充填されている化合物半導体の構成元
素を前記単結晶基板上に照射せしめ、該構成元素を単結
晶基板上に結合させて化合物半導体のエピタキシャル成
長を行う成長装置において、前記構成元素のうち蒸気圧
が高く被処理単結晶基板上では他の構成元素の飛来によ
ってのみ付着が可能な元素の分子線源セルを他の分子線
源セルよりも大口径に作ると共に前記単結晶基板の正面
に近接して設けることを特徴とする分子線結晶成長装置
。A structure of a compound semiconductor in which a plurality of molecular beam source cells are provided on a single crystal substrate heated in an ultra-high vacuum, facing each other, and the cells are individually filled by heating the single crystal substrate. In a growth apparatus that performs epitaxial growth of a compound semiconductor by irradiating elements onto the single crystal substrate and bonding the constituent elements onto the single crystal substrate, some of the constituent elements having a high vapor pressure and others on the single crystal substrate to be processed are used. A molecular beam crystal, characterized in that a molecular beam source cell for an element that can be attached only by the flying of constituent elements is made to have a larger diameter than other molecular beam source cells, and is provided close to the front of the single crystal substrate. growth equipment.
JP1995484U 1984-02-15 1984-02-15 Molecular beam crystal growth equipment Granted JPS60132470U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1995484U JPS60132470U (en) 1984-02-15 1984-02-15 Molecular beam crystal growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1995484U JPS60132470U (en) 1984-02-15 1984-02-15 Molecular beam crystal growth equipment

Publications (2)

Publication Number Publication Date
JPS60132470U true JPS60132470U (en) 1985-09-04
JPS6348703Y2 JPS6348703Y2 (en) 1988-12-14

Family

ID=30510001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1995484U Granted JPS60132470U (en) 1984-02-15 1984-02-15 Molecular beam crystal growth equipment

Country Status (1)

Country Link
JP (1) JPS60132470U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5640658U (en) * 1979-09-05 1981-04-15

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5425219A (en) * 1977-07-28 1979-02-26 Asahi Organic Chem Ind Method of making casting sand

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5640658U (en) * 1979-09-05 1981-04-15

Also Published As

Publication number Publication date
JPS6348703Y2 (en) 1988-12-14

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