JPS59160563U - Susceptor for vapor phase growth equipment - Google Patents
Susceptor for vapor phase growth equipmentInfo
- Publication number
- JPS59160563U JPS59160563U JP5600783U JP5600783U JPS59160563U JP S59160563 U JPS59160563 U JP S59160563U JP 5600783 U JP5600783 U JP 5600783U JP 5600783 U JP5600783 U JP 5600783U JP S59160563 U JPS59160563 U JP S59160563U
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- vapor phase
- phase growth
- heat
- growth apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来の気相成長装置用サセプタの一例を示す平
面図、第２図は第１図の■−■線による断面図、第３図
は本考案の一実施例を示す平面図、第４図は第３図のＩ
Ｖ−ＩＶ線による断面図、第５図および第６図は本考案
のそれぞれ異なる他の実施例を示す平面図である。
１０．２０．２０ａ、２０ｂ−−−−−−サｔ？ブタ、
１１、 １１８． １１ｂ−−−−−−試料基板、２１
，２１８゜２ ｌ ｂ−−−−−−発熱性材料部分、２
２，２２ａ、２２ｂ・・・・・・支持部。FIG. 1 is a plan view showing an example of a conventional susceptor for a vapor phase growth apparatus, FIG. 2 is a sectional view taken along the line ■-■ in FIG. 1, and FIG. 3 is a plan view showing an embodiment of the present invention. Figure 4 is I of Figure 3.
5 and 6 are plan views showing different embodiments of the present invention. 10.20.20a, 20b---Sat? pig,
11, 118. 11b------Sample substrate, 21
, 218゜2 l b------ Exothermic material part, 2
2, 22a, 22b...Support part.
Claims (1)
する部分を試料基板の形状にほぼ合わせて加熱手段によ
る発熱性材料で形成し、該発熱性材料部分を非発熱性材
料の支持部によって支えるようにしたことを特徴とする
気相成長装置用サセプタ。 ２ 発熱性材料部分が、各試料基板毎に分割して形成さ
れ、これらを支持部上に配列してなる実用新案登録請求
の範囲第１項記載の気相成長装置用サセプタ。 ３ 発熱性材料部分が、ＳｉＣ被覆されたカーボンで形
成され、支持部が石英ガラスで形成されている実用新案
登録請求の範囲第１または２項記載の気相成長装置用サ
セプタ。[Claims for Utility Model Registration] 1. In a susceptor for a vapor phase growth apparatus, the part on which the sample substrate is placed is formed of a heat-generating material using a heating means to approximately match the shape of the sample substrate, and the part of the heat-generating material is made of a non-heat-generating material. A susceptor for a vapor phase growth apparatus, characterized in that it is supported by a support part made of a heat-generating material. 2. A susceptor for a vapor phase growth apparatus according to claim 1, wherein the exothermic material portion is formed separately for each sample substrate and arranged on a support portion. 3. The susceptor for a vapor phase growth apparatus according to claim 1 or 2, wherein the exothermic material portion is made of SiC-coated carbon and the support portion is made of quartz glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5600783U JPS59160563U (en) | 1983-04-14 | 1983-04-14 | Susceptor for vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5600783U JPS59160563U (en) | 1983-04-14 | 1983-04-14 | Susceptor for vapor phase growth equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59160563U true JPS59160563U (en) | 1984-10-27 |
Family
ID=30186332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5600783U Pending JPS59160563U (en) | 1983-04-14 | 1983-04-14 | Susceptor for vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59160563U (en) |
-
1983
- 1983-04-14 JP JP5600783U patent/JPS59160563U/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS59160563U (en) | Susceptor for vapor phase growth equipment | |
| JPS605116U (en) | Susceptor for vapor phase growth | |
| JPS59125976U (en) | Graphite heating table for thin film growth equipment | |
| JPS6032361U (en) | Crucible exchange device in vacuum evaporation equipment | |
| JPS5944541U (en) | Diffusion furnace type reduced pressure vapor phase growth equipment | |
| JPS59160529U (en) | Transport platform | |
| JPS596836U (en) | Thin film vapor phase growth equipment | |
| JPS59178329U (en) | Transport platform | |
| JPS59109133U (en) | Infrared heat treatment equipment | |
| JPS5850728U (en) | Support structure of tuning fork type vibrator | |
| JPS59103770U (en) | Thin film vapor phase growth equipment | |
| JPS58168574U (en) | Vapor phase growth reactor | |
| JPS59178328U (en) | Transport platform | |
| JPS59109134U (en) | Infrared heat treatment equipment | |
| JPS5895634U (en) | Annealing equipment | |
| JPS60132470U (en) | Molecular beam crystal growth equipment | |
| JPS59121831U (en) | Evaporation source heat shield for molecular beam epitaxy | |
| JPS6139937U (en) | Diffusion furnace type vapor phase growth equipment | |
| JPS6141250U (en) | Photosensitive material processing equipment | |
| JPS6057125U (en) | Semiconductor vapor phase growth equipment | |
| JPS609941U (en) | Transport platform | |
| JPS59187132U (en) | Substrate heating holder for molecular beam epitaxial equipment | |
| JPS59117139U (en) | semiconductor manufacturing equipment | |
| JPS60130640U (en) | Semiconductor device manufacturing equipment | |
| JPS60146336U (en) | Semiconductor device manufacturing equipment |