JPS59121831U - Evaporation source heat shield for molecular beam epitaxy - Google Patents

Evaporation source heat shield for molecular beam epitaxy

Info

Publication number
JPS59121831U
JPS59121831U JP1442683U JP1442683U JPS59121831U JP S59121831 U JPS59121831 U JP S59121831U JP 1442683 U JP1442683 U JP 1442683U JP 1442683 U JP1442683 U JP 1442683U JP S59121831 U JPS59121831 U JP S59121831U
Authority
JP
Japan
Prior art keywords
heat shield
evaporation source
molecular beam
source heat
beam epitaxy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1442683U
Other languages
Japanese (ja)
Inventor
市原　藤三郎
Original Assignee
日本真空技術株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本真空技術株式会社 filed Critical 日本真空技術株式会社
Priority to JP1442683U priority Critical patent/JPS59121831U/en
Publication of JPS59121831U publication Critical patent/JPS59121831U/en
Pending legal-status Critical Current

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  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来公知のこの種蒸発源熱シールドの断面略図
、第２図は本考案による分子線エピタキシー用蒸発源熱
シールドの一例の断面略図であり、図中、１は蒸発用る
つぼ、２はヒーター、３は金メッキ５を施した石英ガラ
ス製ホルダー、４は熱シールドである。FIG. 1 is a schematic cross-sectional view of a conventionally known evaporation source heat shield of this type, and FIG. 2 is a cross-sectional schematic view of an example of an evaporation source heat shield for molecular beam epitaxy according to the present invention. 3 is a heater, 3 is a gold-plated quartz glass holder, and 4 is a heat shield.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 蒸発用るつぼ１及びヒーター２を内周面全域に金メッキ
５を施した石英ガラス又は高融点金属製ホルダー３内に
配設し、該ホルダー３の外周及び下側に熱シールド板４
を配置してなる分子線エピタキシー用蒸発源熱シールド
。The evaporation crucible 1 and the heater 2 are arranged in a holder 3 made of quartz glass or high melting point metal whose entire inner peripheral surface is plated with gold 5, and a heat shield plate 4 is provided on the outer periphery and underside of the holder 3.
Evaporation source heat shield for molecular beam epitaxy.
JP1442683U 1983-02-04 1983-02-04 Evaporation source heat shield for molecular beam epitaxy Pending JPS59121831U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1442683U JPS59121831U (en) 1983-02-04 1983-02-04 Evaporation source heat shield for molecular beam epitaxy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1442683U JPS59121831U (en) 1983-02-04 1983-02-04 Evaporation source heat shield for molecular beam epitaxy

Publications (1)

Publication Number Publication Date
JPS59121831U true JPS59121831U (en) 1984-08-16

Family

ID=30145789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1442683U Pending JPS59121831U (en) 1983-02-04 1983-02-04 Evaporation source heat shield for molecular beam epitaxy

Country Status (1)

Country Link
JP (1) JPS59121831U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224311A (en) * 1985-03-29 1986-10-06 Hitachi Ltd Molecular beam source
JPS61236112A (en) * 1985-04-12 1986-10-21 Hitachi Ltd Source of molecular beam

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5740518U (en) * 1980-08-15 1982-03-04
JPS57201522A (en) * 1981-06-01 1982-12-10 Mitsubishi Electric Corp Cell for vacuum deposition

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5740518U (en) * 1980-08-15 1982-03-04
JPS57201522A (en) * 1981-06-01 1982-12-10 Mitsubishi Electric Corp Cell for vacuum deposition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224311A (en) * 1985-03-29 1986-10-06 Hitachi Ltd Molecular beam source
JPS61236112A (en) * 1985-04-12 1986-10-21 Hitachi Ltd Source of molecular beam

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