JPS62180933U - - Google Patents
Info
- Publication number
- JPS62180933U JPS62180933U JP6874186U JP6874186U JPS62180933U JP S62180933 U JPS62180933 U JP S62180933U JP 6874186 U JP6874186 U JP 6874186U JP 6874186 U JP6874186 U JP 6874186U JP S62180933 U JPS62180933 U JP S62180933U
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- vapor phase
- growth apparatus
- phase growth
- nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001947 vapour-phase growth Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 claims 10
- 238000006243 chemical reaction Methods 0.000 claims 2
- 239000007788 liquid Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Description
第１図は本考案の気相成長装置の一実施例を示
す概略断面図、第２図は本考案の要部を示す図で
ある。
１……ウエハ、２……ウエハホルダ、３……ベ
ルジヤ、４……サセプタ、５……加熱コイル、６
……供給ノズル、７……排気ノズル、８……変流
板。
FIG. 1 is a schematic sectional view showing an embodiment of the vapor phase growth apparatus of the present invention, and FIG. 2 is a diagram showing the main parts of the present invention. DESCRIPTION OF SYMBOLS 1...Wafer, 2...Wafer holder, 3...Belgear, 4...Susceptor, 5...Heating coil, 6
... Supply nozzle, 7 ... Exhaust nozzle, 8 ... Current variable plate.
Claims (1)
し、該ウエハの外周から孔またはスリツトを有す
るノズルを用い、ウエハ表面に実質上平行に原料
ガスを供給し、該半導ウエハ表面に気相化学反応
により薄膜を形成する気相成長装置において、前
記原料ガスのノズルからの噴出方向をウエハ外周
に別に設けた変流板の方向とし、前記原料ガスが
一度前記変流板に衝突した後ウエハ表面に供給す
ることを特徴とする気相成長装置。 ２ 前記特許請求の範囲第１項において、ウエハ
を水平で多段積層状態でウエハホルダに収納して
いることを特徴とする気相成長装置。 ３ 前記特許請求の範囲第１項、第２項において
、ウエハ加熱体を反応容器内に配置し、実質的に
ウエハ全体を包囲することを特徴とする気相成長
装置。[Claims for Utility Model Registration] 1. A semiconductor wafer is rotated around its center as an axis of rotation, and a source gas is supplied from the outer periphery of the wafer substantially parallel to the wafer surface using a nozzle having holes or slits, In a vapor phase growth apparatus that forms a thin film on the surface of a wafer through a vapor phase chemical reaction, the source gas is ejected from a nozzle in the direction of a current-changing plate separately provided on the wafer's outer periphery. A vapor phase growth apparatus characterized by supplying the liquid to the wafer surface after colliding with the plate. 2. A vapor phase growth apparatus according to claim 1, characterized in that the wafers are housed in a wafer holder in a horizontal multi-stage stacked state. 3. A vapor phase growth apparatus according to Claims 1 and 2, characterized in that the wafer heating element is disposed within the reaction vessel and substantially surrounds the entire wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6874186U JPS62180933U (en) | 1986-05-09 | 1986-05-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6874186U JPS62180933U (en) | 1986-05-09 | 1986-05-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62180933U true JPS62180933U (en) | 1987-11-17 |
Family
ID=30908836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6874186U Pending JPS62180933U (en) | 1986-05-09 | 1986-05-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62180933U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0355840A (en) * | 1989-07-25 | 1991-03-11 | Tokyo Electron Sagami Ltd | Processing method in vertical type processing equipment |
-
1986
- 1986-05-09 JP JP6874186U patent/JPS62180933U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0355840A (en) * | 1989-07-25 | 1991-03-11 | Tokyo Electron Sagami Ltd | Processing method in vertical type processing equipment |
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