JPS61172169U - - Google Patents
Info
- Publication number
- JPS61172169U JPS61172169U JP5587185U JP5587185U JPS61172169U JP S61172169 U JPS61172169 U JP S61172169U JP 5587185 U JP5587185 U JP 5587185U JP 5587185 U JP5587185 U JP 5587185U JP S61172169 U JPS61172169 U JP S61172169U
- Authority
- JP
- Japan
- Prior art keywords
- nozzle
- vapor phase
- ejection ports
- phase growth
- nozzle device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001947 vapour-phase growth Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 claims 1
- 239000012071 phase Substances 0.000 claims 1
- 239000000376 reactant Substances 0.000 claims 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図乃至第３図は本考案の一実施例を示すも
ので、第１図は気相成長装置のノズル装置を示す
正面図、第２図はその平面図、第３図ａ〜ｄはサ
セプタ半径方向の膜厚分布を示すグラフ図、第４
図は従来のノズルを示す平面図、第５図はその正
面図である。
１１……サセプタ（支持体）、１６……ウエハ
（被処理材）、１２……ノズル、１３，１４，１
５……噴出口。
1 to 3 show an embodiment of the present invention, in which FIG. 1 is a front view showing a nozzle device of a vapor phase growth apparatus, FIG. 2 is a plan view thereof, and FIGS. 3 a to d are Graph showing the film thickness distribution in the radial direction of the susceptor, No. 4
The figure is a plan view showing a conventional nozzle, and FIG. 5 is a front view thereof. 11... Susceptor (support body), 16... Wafer (processed material), 12... Nozzle, 13, 14, 1
5... spout.
Claims (1)
ル周壁に穿設された複数個の噴出口から略平行に
反応ガスを噴出させて気相成長させるものにおい
て、前記ノズルの近隣する複数個の噴出口を、該
噴出口からの反応ガスが相互に干渉しないような
間隔をとつて、その高さ寸法および周方向の位相
を異ならせたことを特徴とする気相成長装置のノ
ズル装置。 (2) ノズルの噴出口の数は２乃至８個であるこ
とを特徴とする実用新案登録請求の範囲第１項記
載の気相成長装置のノズル装置。[Claims for Utility Model Registration] (1) Reactant gas is ejected approximately parallel to the material to be treated placed on a support from a plurality of ejection ports provided in the peripheral wall of the nozzle to cause vapor phase growth. A plurality of adjacent ejection ports of the nozzle are spaced apart so that the reaction gases from the ejection ports do not interfere with each other, and the height dimension and circumferential phase thereof are different. Nozzle device for vapor phase growth equipment. (2) The nozzle device for a vapor phase growth apparatus according to claim 1, wherein the number of nozzles is 2 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5587185U JPH0345955Y2 (en) | 1985-04-15 | 1985-04-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5587185U JPH0345955Y2 (en) | 1985-04-15 | 1985-04-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61172169U true JPS61172169U (en) | 1986-10-25 |
| JPH0345955Y2 JPH0345955Y2 (en) | 1991-09-27 |
Family
ID=30578952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5587185U Expired JPH0345955Y2 (en) | 1985-04-15 | 1985-04-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0345955Y2 (en) |
-
1985
- 1985-04-15 JP JP5587185U patent/JPH0345955Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0345955Y2 (en) | 1991-09-27 |
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