JPS62203272U - - Google Patents

Info

Publication number
JPS62203272U
JPS62203272U JP8938286U JP8938286U JPS62203272U JP S62203272 U JPS62203272 U JP S62203272U JP 8938286 U JP8938286 U JP 8938286U JP 8938286 U JP8938286 U JP 8938286U JP S62203272 U JPS62203272 U JP S62203272U
Authority
JP
Japan
Prior art keywords
flow path
susceptor
wafer
epitaxial growth
gravity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8938286U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8938286U priority Critical patent/JPS62203272U/ja
Publication of JPS62203272U publication Critical patent/JPS62203272U/ja
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案一実施例の一部省略した構成説
明図、第2図は反応炉内温度分布図、第3図は反
応炉内の反応ガスの流れの説明図、第4図は従来
のエピタキシヤル成長炉装置の構成説明図、第5
図は従来装置における反応ガスの流れの説明図で
ある。 11はサセプター、13は流路、14はウエハ
Fig. 1 is an explanatory diagram of a partially omitted configuration of an embodiment of the present invention, Fig. 2 is a temperature distribution diagram in the reactor, Fig. 3 is an explanatory diagram of the flow of reaction gas in the reactor, and Fig. 4 is a conventional diagram. Explanatory diagram of the structure of the epitaxial growth furnace apparatus, No. 5
The figure is an explanatory diagram of the flow of reaction gas in a conventional device. 11 is a susceptor, 13 is a flow path, and 14 is a wafer.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] サセプター11を重力の方向に対して垂直にす
ると共にこのサセプター11の中央部に上方に抜
ける流路13を設け、サセプター11の下面にウ
エハ14を取付け、反応ガスAをサセプター11
の外周側からウエハ14の表面を経て流路13に
導くようにしたことを特徴とするエピタキシヤル
成長炉装置。
The susceptor 11 is made perpendicular to the direction of gravity, and a flow path 13 is provided in the center of the susceptor 11 to exit upward.
An epitaxial growth furnace apparatus characterized in that the flow path is guided from the outer peripheral side of the wafer 14 through the surface of the wafer 14 to the flow path 13.
JP8938286U 1986-06-13 1986-06-13 Pending JPS62203272U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8938286U JPS62203272U (en) 1986-06-13 1986-06-13

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8938286U JPS62203272U (en) 1986-06-13 1986-06-13

Publications (1)

Publication Number Publication Date
JPS62203272U true JPS62203272U (en) 1987-12-25

Family

ID=30948324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8938286U Pending JPS62203272U (en) 1986-06-13 1986-06-13

Country Status (1)

Country Link
JP (1) JPS62203272U (en)

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