JPH0217555U - - Google Patents
Info
- Publication number
- JPH0217555U JPH0217555U JP9663688U JP9663688U JPH0217555U JP H0217555 U JPH0217555 U JP H0217555U JP 9663688 U JP9663688 U JP 9663688U JP 9663688 U JP9663688 U JP 9663688U JP H0217555 U JPH0217555 U JP H0217555U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- heater
- plasma cvd
- cvd apparatus
- cathode electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 claims 1
- 230000005684 electric field Effects 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 239000000376 reactant Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
第１図は本考案の一実施例を示す概縦断側面図
、第２図はその排気口の概縦断側面図、第３図は
従来例を示す概縦断側面図である。
１……基板、３……アノード電極、４……ヒー
タ、５……カソード電極、７……外側面、１３…
…アースシールド、１４……ヒータ、１５……排
気口、１６……排気孔、１７……外側端、Ｐ……
反応ガス。
FIG. 1 is a schematic longitudinal sectional side view showing an embodiment of the present invention, FIG. 2 is a schematic longitudinal sectional side view of an exhaust port thereof, and FIG. 3 is a schematic vertical sectional side view showing a conventional example. DESCRIPTION OF SYMBOLS 1... Substrate, 3... Anode electrode, 4... Heater, 5... Cathode electrode, 7... Outer surface, 13...
...Earth shield, 14...Heater, 15...Exhaust port, 16...Exhaust hole, 17...Outer end, P...
Reactant gas.
Claims (1)
を固定し、この基板と対向する位置に配設された
カソード電極側から反応ガスを導入し、これら電
極間に高周波電界を印加して化学反応を起させ前
記基板上に薄膜を形成させるプラズマＣＶＤ装置
において、前記カソード電極の外側面に沿つてヒ
ータを内蔵したアースシールドを配設し、このア
ースシールドの外側端に近接して多数の微細な排
気孔を有する排気口を設けたことを特徴とするプ
ラズマＣＶＤ装置。 A substrate is fixed on an anode electrode that is heated by a heater, a reactive gas is introduced from the cathode electrode placed opposite the substrate, and a high-frequency electric field is applied between these electrodes to cause a chemical reaction. In the plasma CVD apparatus for forming a thin film on the substrate, an earth shield with a built-in heater is disposed along the outer surface of the cathode electrode, and a large number of fine exhaust holes are provided near the outer edge of the earth shield. A plasma CVD apparatus characterized in that it is provided with an exhaust port.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9663688U JPH0217555U (en) | 1988-07-21 | 1988-07-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9663688U JPH0217555U (en) | 1988-07-21 | 1988-07-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0217555U true JPH0217555U (en) | 1990-02-05 |
Family
ID=31321672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9663688U Pending JPH0217555U (en) | 1988-07-21 | 1988-07-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0217555U (en) |
-
1988
- 1988-07-21 JP JP9663688U patent/JPH0217555U/ja active Pending
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