JPS62110264U - - Google Patents
Info
- Publication number
- JPS62110264U JPS62110264U JP20281885U JP20281885U JPS62110264U JP S62110264 U JPS62110264 U JP S62110264U JP 20281885 U JP20281885 U JP 20281885U JP 20281885 U JP20281885 U JP 20281885U JP S62110264 U JPS62110264 U JP S62110264U
- Authority
- JP
- Japan
- Prior art keywords
- reaction gas
- ion plating
- vacuum chamber
- hole connected
- ionized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012495 reaction gas Substances 0.000 claims description 7
- 238000007733 ion plating Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
第１図、第２図は本考案の一実施例として示し
たイオンプレーテイング装置に構成を示す図であ
つて、第１図はその概略構成を示す正断面図、第
２図はイオン化装置の部分を示す正断面図である
。第３図、第４図は従来のイオンプレーテイング
装置の概略構成を示す正断面図である。
１…真空容器、３…基板、４…蒸発材料、３５
…イオン化装置、４０…真空室、４１…反応ガス
供給孔、４２…反応ガス排出孔、４５…電極、４
６…フイラメント。
1 and 2 are diagrams showing the configuration of an ion plating apparatus shown as an embodiment of the present invention, in which FIG. 1 is a front cross-sectional view showing the schematic configuration, and FIG. It is a front sectional view showing a part. FIGS. 3 and 4 are front sectional views showing the schematic structure of a conventional ion plating apparatus. 1... Vacuum container, 3... Substrate, 4... Evaporation material, 35
... Ionization device, 40 ... Vacuum chamber, 41 ... Reaction gas supply hole, 42 ... Reaction gas discharge hole, 45 ... Electrode, 4
6...Filament.
Claims (1)
た反応ガス、およびイオン化した蒸発材料から生
成された膜を形成するイオンプレーテイング装置
において、前記反応ガスのイオン化装置は、真空
室に反応ガスを供給する装置に接続された反応ガ
ス供給孔と、前記真空容器に接続された反応ガス
排出孔との間に、電圧が印加された電極およびフ
イラメントとを順次配置してなることを特徴とす
るイオンプレーテイング装置。 In an ion plating apparatus that forms a film generated from an ionized reaction gas and an ionized evaporation material on the surface of a substrate placed in a vacuum chamber, the reaction gas ionization device supplies the reaction gas to the vacuum chamber. Ion plating characterized in that an electrode and a filament to which a voltage is applied are arranged in sequence between a reaction gas supply hole connected to the device and a reaction gas discharge hole connected to the vacuum container. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20281885U JPS62110264U (en) | 1985-12-28 | 1985-12-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20281885U JPS62110264U (en) | 1985-12-28 | 1985-12-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62110264U true JPS62110264U (en) | 1987-07-14 |
Family
ID=31167557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20281885U Pending JPS62110264U (en) | 1985-12-28 | 1985-12-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62110264U (en) |
-
1985
- 1985-12-28 JP JP20281885U patent/JPS62110264U/ja active Pending