JPH0444363U - - Google Patents

Info

Publication number
JPH0444363U
JPH0444363U JP8643990U JP8643990U JPH0444363U JP H0444363 U JPH0444363 U JP H0444363U JP 8643990 U JP8643990 U JP 8643990U JP 8643990 U JP8643990 U JP 8643990U JP H0444363 U JPH0444363 U JP H0444363U
Authority
JP
Japan
Prior art keywords
thin film
arc
anode
cathode
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8643990U
Other languages
Japanese (ja)
Other versions
JP2503591Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8643990U priority Critical patent/JP2503591Y2/en
Publication of JPH0444363U publication Critical patent/JPH0444363U/ja
Application granted granted Critical
Publication of JP2503591Y2 publication Critical patent/JP2503591Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例を表す薄膜生成装置
の側断面図である。 図中、1は陽極、2は陰極、4は薄膜、5は基
板、6はアーク、7は大電力パルス放電手段、1
2はガス状の薄膜生成材料、13はガス供給手段
である。
FIG. 1 is a side sectional view of a thin film generating apparatus representing an embodiment of the present invention. In the figure, 1 is an anode, 2 is a cathode, 4 is a thin film, 5 is a substrate, 6 is an arc, 7 is a high power pulse discharge means, 1
2 is a gaseous thin film forming material, and 13 is a gas supply means.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 陰極−陽極間のアーク中にガス状の薄膜生成材
料を供給してプラズマ状態にし、これを基板上に
吹き付けて薄膜として堆積させる薄膜生成装置に
おいて、筒体状の陽極と、その中心部に配置され
た陰極と、該陰極と上記陽極との間にパルス状の
高電圧を印加し、これら電極を溶融・気化させつ
つ電極間にアークを発生させる大電力パルス放電
手段と、夫々異なつたガス状薄膜生成材料を上記
アーク中に供給するガス供給手段とを備えたこと
を特徴とする薄膜生成装置。
In a thin film generation device that supplies a gaseous thin film generation material into the arc between the cathode and anode to create a plasma state and sprays it onto a substrate to deposit it as a thin film, a cylindrical anode and a cylindrical anode placed at its center are used. a high-power pulse discharge means that applies a pulsed high voltage between the cathode and the anode to generate an arc between the electrodes while melting and vaporizing these electrodes; A thin film generating device comprising a gas supply means for supplying a thin film generating material into the arc.
JP8643990U 1990-08-20 1990-08-20 Thin film generator Expired - Lifetime JP2503591Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8643990U JP2503591Y2 (en) 1990-08-20 1990-08-20 Thin film generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8643990U JP2503591Y2 (en) 1990-08-20 1990-08-20 Thin film generator

Publications (2)

Publication Number Publication Date
JPH0444363U true JPH0444363U (en) 1992-04-15
JP2503591Y2 JP2503591Y2 (en) 1996-07-03

Family

ID=31818106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8643990U Expired - Lifetime JP2503591Y2 (en) 1990-08-20 1990-08-20 Thin film generator

Country Status (1)

Country Link
JP (1) JP2503591Y2 (en)

Also Published As

Publication number Publication date
JP2503591Y2 (en) 1996-07-03

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