JPS5974659U - Ion generator of ion implanter - Google Patents

Ion generator of ion implanter

Info

Publication number
JPS5974659U
JPS5974659U JP17033382U JP17033382U JPS5974659U JP S5974659 U JPS5974659 U JP S5974659U JP 17033382 U JP17033382 U JP 17033382U JP 17033382 U JP17033382 U JP 17033382U JP S5974659 U JPS5974659 U JP S5974659U
Authority
JP
Japan
Prior art keywords
ion
arc chamber
generator
ion implantation
implanter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17033382U
Other languages
Japanese (ja)
Other versions
JPH051895Y2 (en
Inventor
石垣　秀樹
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Priority to JP17033382U priority Critical patent/JPS5974659U/en
Publication of JPS5974659U publication Critical patent/JPS5974659U/en
Application granted granted Critical
Publication of JPH051895Y2 publication Critical patent/JPH051895Y2/ja
Granted legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

添付図面はこの考案の一実施例を示す断面図である。 １・・・・・・フィラメント、３・・・・・・アークチ
ャンバー、５・・・・・・イオン化物質、３Ａ・・・・
・・アークチャンバースリット。The accompanying drawing is a sectional view showing an embodiment of this invention. 1...Filament, 3...Arc chamber, 5...Ionized substance, 3A...
...Arc chamber slit.

Claims (1)

【実用新案登録請求の範囲】 ■　陽極のアークチャンバー内に陰極のフィラメントを
電気的に絶縁して挿通し、前記アークチャンバーの内壁
にイオン化物質を設けてなるイオン注入装置のイオン発
生装置。 ２　イオン化物質をアークチャンバーの内壁にコーティ
ングしてなる実用新案登録請求の範囲第一項記載のイオ
ン注入装置のイオン発生装置。 ３　イオン化物質をアークチャンバーの内壁にライナー
等として組込んでなる実用新案登録請求の範囲第一項記
載のイオン注入装置のイオン発生装置。 ４　イオン化物質でアークチャンバーを形成した実用新
案登録請求の範囲第一項記載のイオン注入装置のイオン
発生装置。[Claims for Utility Model Registration] ■ An ion generator for an ion implantation device, in which a filament of a cathode is electrically insulated and inserted into an arc chamber of an anode, and an ionized substance is provided on the inner wall of the arc chamber. 2. An ion generating device for an ion implantation device according to claim 1, which is formed by coating the inner wall of an arc chamber with an ionized substance. 3. An ion generating device for an ion implantation device according to claim 1 of the utility model registration claim, which comprises incorporating an ionized substance into the inner wall of an arc chamber as a liner or the like. 4. An ion generating device for an ion implantation device according to claim 1 of the registered utility model claim, in which an arc chamber is formed of an ionized substance.
JP17033382U 1982-11-10 1982-11-10 Ion generator of ion implanter Granted JPS5974659U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17033382U JPS5974659U (en) 1982-11-10 1982-11-10 Ion generator of ion implanter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17033382U JPS5974659U (en) 1982-11-10 1982-11-10 Ion generator of ion implanter

Publications (2)

Publication Number Publication Date
JPS5974659U true JPS5974659U (en) 1984-05-21
JPH051895Y2 JPH051895Y2 (en) 1993-01-19

Family

ID=30371880

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17033382U Granted JPS5974659U (en) 1982-11-10 1982-11-10 Ion generator of ion implanter

Country Status (1)

Country Link
JP (1) JPS5974659U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07153417A (en) * 1993-11-26 1995-06-16 Tel Varian Ltd Ion implanting device
JPH10188833A (en) * 1996-12-26 1998-07-21 Toshiba Corp Ion generation device and ion irradiation device
JP2014086137A (en) * 2012-10-19 2014-05-12 Ran Technical Service Kk Cold cathode type ion source

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5252099A (en) * 1975-10-22 1977-04-26 Hitachi Ltd Plasma ion source
JPS5459870A (en) * 1977-10-21 1979-05-14 Japan Atomic Energy Res Inst Ion source unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5252099A (en) * 1975-10-22 1977-04-26 Hitachi Ltd Plasma ion source
JPS5459870A (en) * 1977-10-21 1979-05-14 Japan Atomic Energy Res Inst Ion source unit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07153417A (en) * 1993-11-26 1995-06-16 Tel Varian Ltd Ion implanting device
JPH10188833A (en) * 1996-12-26 1998-07-21 Toshiba Corp Ion generation device and ion irradiation device
JP2014086137A (en) * 2012-10-19 2014-05-12 Ran Technical Service Kk Cold cathode type ion source

Also Published As

Publication number Publication date
JPH051895Y2 (en) 1993-01-19

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