JPS63142824U - - Google Patents
Info
- Publication number
- JPS63142824U JPS63142824U JP3501787U JP3501787U JPS63142824U JP S63142824 U JPS63142824 U JP S63142824U JP 3501787 U JP3501787 U JP 3501787U JP 3501787 U JP3501787 U JP 3501787U JP S63142824 U JPS63142824 U JP S63142824U
- Authority
- JP
- Japan
- Prior art keywords
- reaction chamber
- exhaust port
- insulator
- utility
- wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012212 insulator Substances 0.000 claims 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
第１図ａ，ｂは本考案の一実施例の断面図で、
ａは薄膜成長作業前、ｂは薄膜成長作業後を示し
、第２図は従来装置の断面図である。
１：反応室、２，３：電極、５：基板、７：排
気口、８：導気口、９：内部カバー、２１：薄膜
、２２：反応生成物。
Figures 1a and 1b are cross-sectional views of an embodiment of the present invention.
A shows the state before the thin film growth operation, b shows the state after the thin film growth operation, and FIG. 2 is a sectional view of the conventional apparatus. 1: reaction chamber, 2, 3: electrode, 5: substrate, 7: exhaust port, 8: air guide port, 9: internal cover, 21: thin film, 22: reaction product.
Claims (1)
て絶縁物よりなる遮蔽体が配置されたことを特徴
とするプラズマＣＶＤ装置。 A plasma CVD apparatus characterized in that a shield made of an insulator is disposed close to an inner wall of a reaction chamber at least near an exhaust port.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3501787U JPS63142824U (en) | 1987-03-10 | 1987-03-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3501787U JPS63142824U (en) | 1987-03-10 | 1987-03-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63142824U true JPS63142824U (en) | 1988-09-20 |
Family
ID=30844120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3501787U Pending JPS63142824U (en) | 1987-03-10 | 1987-03-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63142824U (en) |
-
1987
- 1987-03-10 JP JP3501787U patent/JPS63142824U/ja active Pending